Abstract
In this study, p-channel amorphous tin oxide thin-film transistors (TFTs)
were fabricated. A vacuum thermal evaporation method with an SnO powder source
was used to deposit the tin-oxide active layer. Thermal annealing in N
$_{2}$
and oxygen
plasma treatment were used as post-deposition treatments to obtain p-channel
switching capabilities from the tin-oxide active layer. We have achieved a
field effect mobility of 5.59 cm
$^{2}$
V
$^{-1}$
s
$^{-1}$
with these TFTs. With their high mobility and low-cost fabrication
process that is applicable to large-sized devices, they represent an advance
toward practical oxide semiconductor technology.
© 2014 IEEE
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