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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 10,
  • Issue 4,
  • pp. 293-298
  • (2014)

Investigation of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by Triple-Targets Magnetron Co-Sputtering

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Abstract

The triple-targets magnetron co-sputtering system with three targets of In $_{2}$ O $_{3}$ , Ga $_{2}$ O $_{3}$ , and Zn was used to deposit amorphous indium gallium zinc oxide (a-IGZO) films. The deposited a-IGZO films were used as the channel layers of the transparent thin film transistors (TFTs). The In $_{2}$ O $_{3}$ RF power of 50 W, Ga $_{2}$ O $_{3}$ RF power of 25 W and Zn DC power of 10 $~$ W were independently tuned to obtain the optimal composition $({In:Ga:Zn} = 3.5{:}1{:}2.7)$ of the a-IGZO films. The effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were 62.3 cm $^{2}$ /V $\cdot$ s, 6.5 $\,\times\,$ 10 $^{6}$ , and 0.23 V/decade, respectively. Using the SiO $_{\rm x}$ passivation and thermal-annealing treatment, the effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were further improved to 68.5 cm $^{2}$ /V $\cdot$ s, 7.0 $\times$ 10 $^{6}$ , and 0.22 V/decade, respectively. In addition, stable performances were also noted.

© 2014 IEEE

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