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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 10, Iss. 4 — Apr. 1, 2014
  • pp: 293–298

Investigation of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by Triple-Targets Magnetron Co-Sputtering

Ching-Ting Lee, Yung-Hao Lin, Mu-Min Chang, and Hsin-Ying Lee

Journal of Display Technology, Vol. 10, Issue 4, pp. 293-298 (2014)


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Abstract

The triple-targets magnetron co-sputtering system with three targets of In $_{2}$ O $_{3}$ , Ga $_{2}$ O $_{3}$ , and Zn was used to deposit amorphous indium gallium zinc oxide (a-IGZO) films. The deposited a-IGZO films were used as the channel layers of the transparent thin film transistors (TFTs). The In $_{2}$ O $_{3}$ RF power of 50 W, Ga $_{2}$ O $_{3}$ RF power of 25 W and Zn DC power of 10 $~$ W were independently tuned to obtain the optimal composition $({In:Ga:Zn} = 3.5{:}1{:}2.7)$ of the a-IGZO films. The effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were 62.3 cm $^{2}$ /V $\cdot$ s, 6.5 $\,\times\,$ 10 $^{6}$ , and 0.23 V/decade, respectively. Using the SiO $_{\rm x}$ passivation and thermal-annealing treatment, the effective field-effect mobility, on-to-off current ratio, and subthreshold swing of the optimal a-IGZO TFTs were further improved to 68.5 cm $^{2}$ /V $\cdot$ s, 7.0 $\times$ 10 $^{6}$ , and 0.22 V/decade, respectively. In addition, stable performances were also noted.

© 2014 IEEE

Citation
Ching-Ting Lee, Yung-Hao Lin, Mu-Min Chang, and Hsin-Ying Lee, "Investigation of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Grown by Triple-Targets Magnetron Co-Sputtering," J. Display Technol. 10, 293-298 (2014)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-10-4-293


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