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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 10, Iss. 7 — Jul. 1, 2014
  • pp: 590–594

Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation

Kanika Nadda and M. Jagadesh Kumar

Journal of Display Technology, Vol. 10, Issue 7, pp. 590-594 (2014)


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Abstract

A lateral polysilicon Bipolar Charge Plasma Transistor (poly-Si BCPT) on undoped recrystallized polycrystalline silicon which is compatible with the thin-film field effect transistor (TFT) fabrication is reported in this paper. Using calibrated two-dimensional device simulation, the electrical performance of the poly-Si BCPT is evaluated in detail by considering the position of the single grain boundary. Our simulation results demonstrate that the poly-Si BCPT has the potential to realize low-cost thin-film polycrystalline silicon bipolar transistors with large current gain and cut-off frequency making it suitable for a number of applications including the driver circuits of the displays.

© 2014 IEEE

Citation
Kanika Nadda and M. Jagadesh Kumar, "Thin-Film Bipolar Transistors on Recrystallized Polycrystalline Silicon Without Impurity Doped Junctions: Proposal and Investigation," J. Display Technol. 10, 590-594 (2014)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-10-7-590

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