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Journal of Display Technology

Journal of Display Technology


  • Vol. 10, Iss. 8 — Aug. 1, 2014
  • pp: 660–665

Top Down Scale-Up of Semiconducting Nanostructures for Large Area Electronics

Cheng Sun, Arman Ahnood, Sungsik Lee, Nripan Mathews, Subodh Mhaisalkar, and Arokia Nathan

Journal of Display Technology, Vol. 10, Issue 8, pp. 660-665 (2014)

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In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1 $\times$ 1 ${{cm}}^{2}$ area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme.

© 2014 IEEE

Cheng Sun, Arman Ahnood, Sungsik Lee, Nripan Mathews, Subodh Mhaisalkar, and Arokia Nathan, "Top Down Scale-Up of Semiconducting Nanostructures for Large Area Electronics," J. Display Technol. 10, 660-665 (2014)

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