In this paper, we present a study on electrical and optical characteristics
of n-type tin-oxide nanowires integrated based on top-down scale-up strategy.
Through a combination of contact printing and plasma based back-channel passivation,
we have achieved stable electrical characteristics with standard deviation
in mobility and threshold voltage of 9.1% and 25%, respectively, for a large
area of 1
© 2014 IEEE
Cheng Sun, Arman Ahnood, Sungsik Lee, Nripan Mathews, Subodh Mhaisalkar, and Arokia Nathan, "Top Down Scale-Up of Semiconducting Nanostructures for Large Area Electronics," J. Display Technol. 10, 660-665 (2014)