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Journal of Display Technology

Journal of Display Technology


  • Vol. 10, Iss. 9 — Sep. 1, 2014
  • pp: 792–796

Performance Investigation of Amorphous InGaZnO Flexible Thin-Film Transistors Deposited on PET Substrates

Hsin-Ying Lee, Wan-Yi Ye, Yung-Hao Lin, and Ching-Ting Lee

Journal of Display Technology, Vol. 10, Issue 9, pp. 792-796 (2014)

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Amorphous indium gallium zinc oxide (a-InGaZnO) flexible thin-film transistors (TFTs) were deposited on polyethylene terephthalate (PET) substrates at low temperature using a triple-targets magnetron radio frequency (RF) cosputter system. During the deposition of InGaZnO films, triple targets of ${In}_{2}{O}_{3}$ target, ${Ga}_{2}{O}_{3}$ target, and Zn target were simultaneously sputtered. By varying the mixing gas ratios, the ${Ar/O}_{2}$ ratio of 55 sccm/45 sccm was used as the sputtering gases to deposit the InGaZnO channel layer. The bottom-gate-type triple-targets InGaZnO flexible TFTs operated in n-type enhancement mode with a transconductance of ${{4.95}}\times {{10}}^{-5}\ {S}$ , a field-effect mobility of ${57.2 cm}^{2}/{V}\cdot{{s}}$ , an on/off ratio of ${{4.19}}\times {{10}}^{7}$ , a turn-on voltage of 0 V, a threshold voltage of 2.5 V, and a subthreshold swing of 0.23 V/decade, which were much better than those of the single InGaZnO target flexible TFTs.

© 2014 IEEE

Hsin-Ying Lee, Wan-Yi Ye, Yung-Hao Lin, and Ching-Ting Lee, "Performance Investigation of Amorphous InGaZnO Flexible Thin-Film Transistors Deposited on PET Substrates," J. Display Technol. 10, 792-796 (2014)

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