Abstract
Amorphous indium gallium zinc oxide (a-InGaZnO) flexible
thin-film transistors (TFTs) were deposited on polyethylene terephthalate
(PET) substrates at low temperature using a triple-targets magnetron radio
frequency (RF) cosputter system. During the deposition of InGaZnO films, triple
targets of
${In}_{2}{O}_{3}$
target,
${Ga}_{2}{O}_{3}$
target, and Zn target were simultaneously sputtered. By varying
the mixing gas ratios, the
${Ar/O}_{2}$
ratio of 55 sccm/45 sccm was used as the sputtering gases to deposit
the InGaZnO channel layer. The bottom-gate-type triple-targets InGaZnO flexible
TFTs operated in n-type enhancement mode with a transconductance of
${{4.95}}\times {{10}}^{-5}\
{S}$
, a field-effect mobility of
${57.2 cm}^{2}/{V}\cdot{{s}}$
,
an on/off ratio of
${{4.19}}\times
{{10}}^{7}$
, a turn-on voltage of 0 V, a threshold voltage
of 2.5 V, and a subthreshold swing of 0.23 V/decade, which were much better
than those of the single InGaZnO target flexible TFTs.
© 2014 IEEE
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