Abstract
The preparation and electrical characterization of bottom-gate
Li-doped MgZnO thin film transistors were studied in this paper. These
Li-doped MgZnO thin films were deposited on
${\rm SiO}_{2}/{\rm Si}$
substrates employing radio frequency magnetron sputtering
at room temperature. This electrical characterization showed the mobility
of
${{9.4}}~{{cm}}^{2}/{{V}}\cdot{{s}}$
, a
${V}_{\rm
TH}$
of
$-{{7}}~{{V}}$
and a large
on/off current ratio of
${{1.4}} \times {{10}}^{7}$
for
Li-doped MgZnO TFT.
© 2015 IEEE
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