Abstract
In this paper, we study the characteristics of blue InGaN light-emitting
diodes (LEDs) with n-AlGaN electron blocking layer (EBL) and n-AlGaN
space layer (SL). The output power, internal quantum efficiency (IQE),
energy band diagrams, carrier concentrations, radiative recombination
and spontaneous emission rate are investigated by advanced physical
model of semiconductor device (APSYS). The simulation results indicate
that the LED with n-AlGaN SL shows an improvement of output power
and radiative recombination than that of the LED with n-AlGaN EBL.
The efficiency droop has been alleviated due to the better carrier
injection and the enhancement of the overlap for the electrons and
holes wave-function.
© 2014 IEEE
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