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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 2, Iss. 4 — Dec. 1, 2006
  • pp: 364–371

Amorphous Silicon Display Backplanes on Plastic Substrates

Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Peyman Servati, Czang-Ho Lee, and Andrei Sazonov

Journal of Display Technology, Vol. 2, Issue 4, pp. 364-371 (2006)


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Abstract

Amorphous silicon (a-Si) thin-film transistor (TFT) backplanes are very promising for active-matrix organic light-emitting diode displays (AMOLEDs) on plastic. The technology benefits from a large manufacturing base, simple fabrication process, and low production cost. The concern lies in the instability of the TFTs threshold voltage (VT) and its low device mobility. Although VT-instability can be compensated by means of advanced multi-transistor pixel circuits, the lifetime of the display is still dependent on the TFT process quality and bias conditions. A-Si TFTs with field-effect mobility of 1.1 cm2/V · s and pixel driver circuits have been fabricated on plastic substrates at 150 °C. The circuits are characterized in terms of current drive capability and long-term stability of operation. The results demonstrate sufficient and stable current delivery and the ability of the backplane on plastic to meet AMOLED requirements.

© 2006 IEEE

Citation
Denis Striakhilev, Arokia Nathan, Yuri Vygranenko, Peyman Servati, Czang-Ho Lee, and Andrei Sazonov, "Amorphous Silicon Display Backplanes on Plastic Substrates," J. Display Technol. 2, 364-371 (2006)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-2-4-364

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