Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization
Journal of Display Technology, Vol. 3, Issue 1, pp. 45-51 (2007)
Acrobat PDF (1485 KB)
Abstract
Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.
© 2007 IEEE
Citation
Chun-Hao Tu, Ting-Chang Chang, Po-Tsun Liu, Che-Yu Yang, Li-Wei Feng, Chia-Chou Tsai, Li-Ting Chang, Yung-Chun Wu, Simon M. Sze, and Chun-Yen Chang, "Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization," J. Display Technol. 3, 45-51 (2007)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-1-45
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Log in to access OSA Member Subscription
« Previous Article | Next Article »
OSA is a member of 