This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.
© 2007 IEEE
Ya-Ju Lee, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang, "High Brightness GaN-Based Light-Emitting Diodes," J. Display Technol. 3, 118-125 (2007)