Amorphous Silicon Thin-Film Transistor Backplanes Deposited at 200 °C on Clear Plastic for Lamination to Electrophoretic Displays
Journal of Display Technology, Vol. 3, Issue 3, pp. 304-308 (2007)
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Abstract
The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures, therefore the substrate must withstand high temperatures. We fabricated a-Si:H TFT backplanes on a clear plastic substrate at 200 °C. The measured stability of the TFTs under gate bias stress was superior to TFTs fabricated at 150 °C. The substrate was dimensionally stable within the measurement resolution of 1 μm, allowing for well-aligned 8 × 8 and 32 × 32 arrays of 500 μm × 500 μm pixels. The operation of the backplane is demonstrated with an electrophoretic display. This result is a step toward the drop-in replacement of glass substrates by plastic foil.
© 2007 IEEE
Citation
Alex Z. Kattamis, I-Chun Cheng, Ke Long, Bahman Hekmatshoar, Kunigunde H. Cherenack, Sigurd Wagner, James C. Sturm, Sameer
M. Venugopal, Douglas E. Loy, Shawn M. O'Rourke, and David R. Allee, "Amorphous Silicon Thin-Film Transistor Backplanes Deposited at 200 °C on Clear Plastic for Lamination to Electrophoretic Displays," J. Display Technol. 3, 304-308 (2007)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-3-304
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