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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 3, Iss. 3 — Sep. 1, 2007
  • pp: 304–308

Amorphous Silicon Thin-Film Transistor Backplanes Deposited at 200 °C on Clear Plastic for Lamination to Electrophoretic Displays

Alex Z. Kattamis, I-Chun Cheng, Ke Long, Bahman Hekmatshoar, Kunigunde H. Cherenack, Sigurd Wagner, James C. Sturm, Sameer M. Venugopal, Douglas E. Loy, Shawn M. O'Rourke, and David R. Allee

Journal of Display Technology, Vol. 3, Issue 3, pp. 304-308 (2007)


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Abstract

The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures, therefore the substrate must withstand high temperatures. We fabricated a-Si:H TFT backplanes on a clear plastic substrate at 200 °C. The measured stability of the TFTs under gate bias stress was superior to TFTs fabricated at 150 °C. The substrate was dimensionally stable within the measurement resolution of 1 μm, allowing for well-aligned 8 × 8 and 32 × 32 arrays of 500 μm × 500 μm pixels. The operation of the backplane is demonstrated with an electrophoretic display. This result is a step toward the drop-in replacement of glass substrates by plastic foil.

© 2007 IEEE

Citation
Alex Z. Kattamis, I-Chun Cheng, Ke Long, Bahman Hekmatshoar, Kunigunde H. Cherenack, Sigurd Wagner, James C. Sturm, Sameer M. Venugopal, Douglas E. Loy, Shawn M. O'Rourke, and David R. Allee, "Amorphous Silicon Thin-Film Transistor Backplanes Deposited at 200 °C on Clear Plastic for Lamination to Electrophoretic Displays," J. Display Technol. 3, 304-308 (2007)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-3-304

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