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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 3, Iss. 4 — Dec. 1, 2007
  • pp: 386–391

The Latest Plasma-Enhanced Chemical-Vapor Deposition Technology for Large-Size Processing

Ya-Tang Yang, Tae Kyung Won, Soo Young Choi, Takako Takehara, Yasunori Nishimura, and John M. White

Journal of Display Technology, Vol. 3, Issue 4, pp. 386-391 (2007)


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Abstract

The thin-film transistor liquid crystal display (TFT-LCD) industry has in recent years demanded ever-larger-area substrate processing capability to keep up with consumer market demands for larger and larger displays. This paper discusses the latest plasma-enhanced chemical-vapor deposition (PECVD) system, the AKT 50K PECVD, which handles up to ${\hbox{2160}}\times {\hbox{2460}}\ {\hbox {mm}}^{2}$ substrates. As substrate size increases, lowering the processing temperature is getting even more important to improve production reliability and cost performance. The most commonly used process temperature for the so-called active layers of amorphous silicon (a-Si) TFTs is approximately 350 $^{\circ} {\hbox {C}}$. In this paper, a newly developed single-chamber low-temperature PECVD active-layers process is discussed. In particular, our low-temperature process maintains film performance at the same level as high-temperature active layers while also maintaining system productivity and throughput.

© 2007 IEEE

Citation
Ya-Tang Yang, Tae Kyung Won, Soo Young Choi, Takako Takehara, Yasunori Nishimura, and John M. White, "The Latest Plasma-Enhanced Chemical-Vapor Deposition Technology for Large-Size Processing," J. Display Technol. 3, 386-391 (2007)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-3-4-386


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References

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