Abstract
In this paper, the variation characteristics of low-temperature polycrystalline
silicon (LTPS) thin-film transistors (TFTs) are investigated with a statistical
approach. A special layout is proposed to investigate the device variation
with respect to various devices distances. Two non-Gaussian equations are
proposed to fit the device parameter distributions, whose the coefficients
of determination $({\rm R}^{2})$ are both near 0.9, reflecting the validity of the model. Two benchmark
circuits are used to compare the difference between the proposed model and
the conventional Gaussian distribution for the device parameter distribution.
The output behaviors of the digital and analog circuits show that the variation
in the short range would greatly affect the performance of the analog circuits
and would instead be averaged in the digital circuits.
© 2007 IEEE
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