An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel
Journal of Display Technology, Vol. 5, Issue 12, pp. 438-445 (2009)
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Abstract
In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.
© 2009 IEEE
Citation
Patrick Wellenius, Arun Suresh, Haojun Luo, Leda M. Lunardi, and John F. Muth, "An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel," J. Display Technol. 5, 438-445 (2009)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-5-12-438
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