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Journal of Display Technology

Journal of Display Technology


  • Vol. 5, Iss. 12 — Dec. 1, 2009
  • pp: 438–445

An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel

Patrick Wellenius, Arun Suresh, Haojun Luo, Leda M. Lunardi, and John F. Muth

Journal of Display Technology, Vol. 5, Issue 12, pp. 438-445 (2009)

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In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.

© 2009 IEEE

Patrick Wellenius, Arun Suresh, Haojun Luo, Leda M. Lunardi, and John F. Muth, "An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel," J. Display Technol. 5, 438-445 (2009)

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