Bias-temperature-stress (BTS) induced electrical instability of the RF sputter amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) was investigated. Both positive and negative BTS were applied and found to primarily cause a positive and negative voltage shift in transfer (IDS - VGS) characteristics, respectively. The time evolution of bulk-state density (NBS) and characteristic temperature of the conduction-band-tail-states (TG are extracted. Since both values showed only minor changes after BTS, the results imply that observed shift in TFT IDS - VGS curves were primarily due to channel charge injection/trapping rather than defect states creation. We also demonstrated the validity of using stretch-exponential equation to model both positive and negative BTS induced threshold voltage shift (ΔVth) of the a-IGZO TFTs. Stress voltage and temperature dependence of ΔVth evolution are described.
© 2009 IEEE
Tze-Ching Fung, Katsumi Abe, Hideya Kumomi, and Jerzy Kanicki, "Electrical Instability of RF Sputter Amorphous In-Ga-Zn-O Thin-Film Transistors," J. Display Technol. 5, 452-461 (2009)