Abstract
We report on zinc oxide (ZnO)-based devices produced by a fast, open-air atomic layer
deposition (ALD) process relying upon the spatial isolation of reactive gases. At deposition
rates of greater than 100 Å per minute, ZnO-based thin-film transistors by spatial atomic layer deposition
(S-ALD) show mobility above 15 cm<sup>2</sup>/Vs and excellent stability. Measurement and modeling of the gas isolation in the
deposition head is discussed. Saturation curves obtained for aluminum oxide (Al<sub>2O<sub>3</sub></sub>) growth using trimethylaluminum and water are shown to be consistent with chamber
ALD systems. Finally, the ability of this new ALD process to leverage patterning by using
poly(methyl methacrylate) (PMMA) as a growth inhibitor for selective area deposition is
discussed. Relatively thin films of PMMA (~ 40 Å) are shown to be capable of inhibiting the growth of ZnO for at least 1200 ALD
cycles.
© 2009 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription