OSA's Digital Library

Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 5, Iss. 12 — Dec. 1, 2009
  • pp: 495–500

MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region

Jaewook Jeong, Yongtaek Hong, Jae Kyeong Jeong, Jin-Seong Park, and Yeon-Gon Mo

Journal of Display Technology, Vol. 5, Issue 12, pp. 495-500 (2009)


View Full Text Article

Acrobat PDF (972 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

In this paper, we analyzed electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with plasma-exposed source–drain (S/D) bulk region. The parasitic resistance and effective channel length characteristics exhibit similar behavior with that of crystalline silicon metal oxide-semiconductor field effect transistor (c-Si MOSFET) that has doped S/D bulk region. The transfer curves little changed with gate overlap variation, and the width-normalized parasitic resistance obtained from transmission line method was as low as 3 to 6 Ω· cm. The effective channel length was shorter than the mask channel length and showed gate-to-source (VGS) voltage dependency that is frequently observed for lightly doped drain (LDD) MOSFET. Experimental and simulation results showed that the plasma exposure caused an LDD-like doping effect in the S/D bulk region by inducing oxygen vacancy in the a-IGZO layer.

© 2009 IEEE

Citation
Jaewook Jeong, Yongtaek Hong, Jae Kyeong Jeong, Jin-Seong Park, and Yeon-Gon Mo, "MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region," J. Display Technol. 5, 495-500 (2009)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-5-12-495

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited