Abstract
In this paper, we analyzed electrical characteristics of amorphous
indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with
plasma-exposed source–drain (S/D) bulk region. The parasitic
resistance and effective channel length characteristics exhibit similar
behavior with that of crystalline silicon metal oxide-semiconductor field
effect transistor (c-Si MOSFET) that has doped S/D bulk region. The transfer
curves little changed with gate overlap variation, and the width-normalized
parasitic resistance obtained from transmission line method was as low as 3
to 6 Ω· cm. The effective channel length was shorter than the mask
channel length and showed gate-to-source (V<sub>GS</sub>) voltage dependency that is frequently observed for lightly doped
drain (LDD) MOSFET. Experimental and simulation results showed that the
plasma exposure caused an LDD-like doping effect in the S/D bulk region by
inducing oxygen vacancy in the a-IGZO layer.
© 2009 IEEE
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