Abstract
Transparent thin-film-transistors (TFTs) with a channel semiconductor
based on the zinc–tin–oxide (ZTO) system are presented.
Specifically, the technological and material aspects of the plasma-assisted
pulsed laser deposition of these materials are discussed. The supply of
additional radical oxygen species will be evidenced to significantly reduce
defects in the material and as a consequence allows for well-behaved
n-channel TFTs with mobilities higher than 10 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> and a threshold voltage in the range of 0 V. In addition the
devices are extremely stable versus bias/current stress, which is especially
important for active matrix OLED applications. Based on a detailed
understanding of the interaction of the TFT channels with oxygen a strategy
for the thin-film encapsulation of the TFTs will be presented, which leaves
their device characteristics unaffected.
© 2009 IEEE
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