OSA's Digital Library

Journal of Display Technology

Journal of Display Technology


  • Vol. 5, Iss. 12 — Dec. 1, 2009
  • pp: 525–530

Solution-Processed Zinc Oxide Transistors for Low-Cost Electronics Applications

Vivek Subramanian, Teymur Bakhishev, David Redinger, and Steven K. Volkman

Journal of Display Technology, Vol. 5, Issue 12, pp. 525-530 (2009)

View Full Text Article

Acrobat PDF (882 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


Transparent conductive oxides are promising candidates for realization of transparent electronics for display applications. The use of solution-processing techniques allows for a dramatic reduction in cost per unit area of electronic functionality. As a result, there is tremendous interest in the use of solution-processed transparent conductive oxides for realization of low-cost transparent electronic systems. Zinc oxide is processable out of solution using a variety of routes, including the use of nanoparticles, nanowires, and chemical bath deposition. By optimizing the deposition processes, it is possible to realize solution-processed transparent semiconductor films offering performance that is comparable to or better than amorphous silicon, while offering the advantages of transparency. Here, techniques for fabrication of solution-processed ZnO-based transistors are reviewed, and the outlook for such technologies is discussed.

© 2009 IEEE

Vivek Subramanian, Teymur Bakhishev, David Redinger, and Steven K. Volkman, "Solution-Processed Zinc Oxide Transistors for Low-Cost Electronics Applications," J. Display Technol. 5, 525-530 (2009)

Sort:  Year  |  Journal  |  Reset


  1. V. Subramanian, J. M. J. Fréchet, P. C. Chang, D. Huang, J. B. Lee, S. E. Molesa, A. R. Murphy, D. R. Redinger, S. K. Volkman, "Progress towards development of all-printed RFID tags: Materials, processes, and devices," Proc. IEEE 93, 1330-1338 (2005).
  2. D. Huang, F. Liao, S. Molesa, D. Redinger, V. Subramanian, "Plastic-compatible low-resistance printable gold nanoparticle conductors for flexible electronics," J. Electrochem. Soc. 150, 412-417 (2003).
  3. D. Redinger, R. Farshchi, V. Subramanian, "An ink-jet-deposited passive component process for RFID," IEEE Trans. Electron Devices 51, 1978-1983 (2004).
  4. S. K. Volkman, Y. Pei, D. Redinger, S. Yin, V. Subramanian, "Ink-jetted silver/copper conductors for printed RFID applications," Flexible Electronics 2004—Materials and Device Technology (2004).
  5. N. S. Pesika, Z. Hu, K. J. Stebe, P. C. Searson, "Quenching of growth of ZnO nanoparticles by adsorption of octanethiol," J. Phys. Chem. B 106, 6985-6990 (2002).
  6. M. Shim, P. Guyot-Sionnest, "Organic-capped ZnO nanocrystals: Synthesis and n-type character," J. Amer. Chem. Soc. 123, 11651-11654 (2001).
  7. Z. Hu, D. J. E. Ramirez, H. E. H. Cerveva, G. Oskam, P. C. Searson, "Synthesis of ZnO nanoparticles in 2-Proponol by reaction with water," J. Phys. Chem. B. 109, 11209-11214 (2005).
  8. R. Viswanathan, S. Sapra, S. S. Gupta, B. Satpati, P. V. Satyam, B. N. Dev, D. D. Sarma, "Synthesis and characterization of Mn-doped ZnO nanocrystals," J. Phys. Chem. B 108, 6303-6310 (2004).
  9. S. K. Volkman, S. E. Molesa, J. B. Lee, B. A. Mattis, A. de la Fuente Vornbrock, T. Bakhishev, V. Subramanian, "A novel transparent air-stable printable n-type semiconductor technology using ZnO nanoparticles," 2004 IEEE Int. Electron Devices Meeting Tech. Dig. pp. 769-772.
  10. B. Sun, H. Sirringhaus, "Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods," Nano Lett. 5, 2408-2413 (2005).
  11. T. Bakhishev, S. K. Volkman, V. Subramanian, "Solution-processed ZnO nanowire-network thin film transistors for transparent electronics," 2005 Mater. Res. Soc. Fall Symp. (2005).
  12. D. Redinger, V. Subramanian, "High-performance chemical-bath-deposited zinc oxide thin-film transistors," IEEE Trans. Electron Devices 54, 1301-1307 (2007).
  13. H.-C. Cheng, C.-F. Chen, C.-Y. Tsay, "Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method," Appl. Phys. Lett. 90, 012113 (2007).
  14. B. J. Norris, J. Anderson, J. F. Wager, D. A. Keszler, "Spin-coated zinc oxide transparent transistors," J. Phys. D: Appl. Phys. 36, L105-L107 (2003).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited