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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 5, Iss. 7 — Jul. 1, 2009
  • pp: 265–272

A Light-Impact Model for p-Type and n-Type Poly-Si TFTs

Nikolas P. Papadopoulos, Alkis A. Hatzopoulos, Dimitris K. Papakostas, Rodrigo Picos, Charalabos A. Dimitriadis, and Stylianos Siskos

Journal of Display Technology, Vol. 5, Issue 7, pp. 265-272 (2009)


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Abstract

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity $(I_{d})$ over the dark current $(I_{\rm dark})$ is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the $V_{\rm ds}$ and $V_{\rm gs}$ voltages and of light intensities.

© 2009 IEEE

Citation
Nikolas P. Papadopoulos, Alkis A. Hatzopoulos, Dimitris K. Papakostas, Rodrigo Picos, Charalabos A. Dimitriadis, and Stylianos Siskos, "A Light-Impact Model for p-Type and n-Type Poly-Si TFTs," J. Display Technol. 5, 265-272 (2009)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-5-7-265


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