Abstract
Amorphous oxide semiconductors (AOSs) are expected as new
channel materials in thin-film transistors (TFTs) for large-area and/or
flexible flat-panel displays and other giant-microelectronics devices. So
far, many prototype displays have been demonstrated in these four years
since the first report of AOS TFT. The most prominent feature of AOS TFTs is
that they operate with good performances even if they are fabricated at low
temperatures without a defect passivation treatment. The TFT mobilities
exceed 10 ${\hbox{cm}}^{2}/({\hbox{V}}\cdot{\hbox{s}})$, which are more than ten times larger than those of conventional
amorphous semiconductor devices. In addition, they operate at low voltages,
e.g., ${<}{\hbox{5\ V}}$ owing to their small subthreshold voltage swings. These features
indicate that electron transport in oxide semiconductors are insensitive to
random structures and these oxides do not form high-density defects that
affect electron transport and TFT operation. In this paper, we discuss the
origins of the prominent features of AOS devices from the viewpoint of
materials science of AOS.
© 2009 IEEE
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