Abstract
We propose new pixel design on emitting area and
corresponding shadow mask design for high resolution active-matrix organic
light-emitting diodes (AMOLEDs) to overcome the limitation of conventional
shadow mask process. The proposed scheme has the extended emitting area into
adjacent sub-pixel and gives flexibility for manufacturing shadow mask with
quarter resolution compared with conventional requirement. The proposed
scheme can use normal pixel driving circuit; however, anode electrode in
each sub-pixel covers adjacent pixels to extend its own emitting aperture
area for high resolution AMOLEDs. We have successfully implemented this
scheme in a 4.3-in-sized WVGA (854 x RGB x 480) AMOLED using p-type advanced-solid phase crystallization (A-SPC)
backplane technology and top emissive organic light-emitting diode (OLED)
device structure and evaluated key performance characteristics.
© 2010 IEEE
PDF Article
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