This paper reports on hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) processed at 150 °C using plasma-enhanced chemical vapor deposition on polyethylene naphthalate (PEN) transparent plastic substrates. We examine the impact of RF deposition power on film stress of amorphous silicon nitride (a-SiNx:H), and resulting TFT performance. Transistors with the lowest stress nitride, yield the best performance in terms of device mobility (~1.1 cm2/V · S), ON/OFF current ratio (~1010), and gate leakage current (< 0.1 pA). Stable TFTs are demonstrated with a threshold voltage shift of less than 0.8 V following 10 hours of DC bias stress at 10 V.
© 2011 IEEE
Isaac Chan, Maryam Moradi, Andrei Sazonov, and Arokia Nathan, "150 °C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic," J. Display Technol. 7, 36-39 (2011)