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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 7, Iss. 1 — Jan. 1, 2011
  • pp: 36–39

150 °C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic

Isaac Chan, Maryam Moradi, Andrei Sazonov, and Arokia Nathan

Journal of Display Technology, Vol. 7, Issue 1, pp. 36-39 (2011)


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Abstract

This paper reports on hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) processed at 150 °C using plasma-enhanced chemical vapor deposition on polyethylene naphthalate (PEN) transparent plastic substrates. We examine the impact of RF deposition power on film stress of amorphous silicon nitride (a-SiNx:H), and resulting TFT performance. Transistors with the lowest stress nitride, yield the best performance in terms of device mobility (~1.1 cm2/V · S), ON/OFF current ratio (~1010), and gate leakage current (< 0.1 pA). Stable TFTs are demonstrated with a threshold voltage shift of less than 0.8 V following 10 hours of DC bias stress at 10 V.

© 2011 IEEE

Citation
Isaac Chan, Maryam Moradi, Andrei Sazonov, and Arokia Nathan, "150 °C Amorphous Silicon Thin Film Transistors With Low-Stress Nitride on Transparent Plastic," J. Display Technol. 7, 36-39 (2011)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-7-1-36


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References

  1. Y. Kuo, Thin Film Transistors Materials and Processes. Volume 1: Amorphous Silicon Thin Film Transistors (Kluwer Academic, 2004).
  2. P. J. Slikkerveer, "Bending the rules," Inf. Displays 3, 20 (2003).
  3. W. A. MacDonald, J. Mater. Chem. 14, 4 (2004).
  4. I. Kobayashi, T. Ogawa, S. Hotta, "Plasma-enhanced chemical vapor deposition of silicon nitride," Jpn. J. Appl. Phys. 31, 336 (1992).
  5. H. Gleskova, I.-C. Cheng, S. Wagner, J. C. Sturm, Z. Suo, "Mechanics of thin-film transistors and solar cells on flexible substrates," Solar Energy 80, 687 (2006).
  6. K. Hiranaka, T. Yoshimura, T. Yamaguchi, "Influence of an a-SiNx:H gate insulator on an amorphous silicon thin-film transistor," J. Appl. Phys. 62, 2129 (1987).
  7. Y. Kuo, "Plasma etching and deposition for a-Si:H thin film transistors," J. Electrochem. Soc. 142, 186 (1995).
  8. M. Stutzmann, "Role of mechanical stress in the light-induced degradation of hydrogenated amorphous silicon," Appl. Phys. Lett. 47, 21 (1985).
  9. P. Servati, A. Nathan, "Modeling of the reverse characteristics of a-Si:H TFTs," IEEE Trans. Electron Devices 49, 812-819 (2002).
  10. K. Khakzar, E. H. Lueder, "Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE," IEEE Trans. Electron Devices 39, 1428-1434 (1992).
  11. M. Shur, M. Hack, J. G. Shaw, "A new analytic model for amorphous silicon thin-film transistors," J. Appl. Phys. 66, 3371 (1989).
  12. R. A. Street, Hydrogenated Amorphous Silicon (Cambridge Univ. Press, 1991).
  13. H. Gleskova, S. Wagner, "Electron mobility in amorphous silicon thin-film transistors under compressive strain," Appl. Phys. Lett. 79, 3347 (2001).
  14. P. Servati, A. Nathan, "Orientation-dependent strain tolerance of amorphous silicon transistors and pixel circuits for elastic organic lightemitting diode displays," Appl. Phys. Lett. 86, 033504 (2005).

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