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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 7, Iss. 12 — Dec. 1, 2011
  • pp: 640–643

Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors

Pradipta K. Nayak, Joana V. Pinto, Gonçalo Gonçalves, Rodrigo Martins, and Elvira Fortunato

Journal of Display Technology, Vol. 7, Issue 12, pp. 640-643 (2011)


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Abstract

In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc–tin–oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value.

© 2011 IEEE

Citation
Pradipta K. Nayak, Joana V. Pinto, Gonçalo Gonçalves, Rodrigo Martins, and Elvira Fortunato, "Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors," J. Display Technol. 7, 640-643 (2011)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-7-12-640

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