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Journal of Display Technology

Journal of Display Technology


  • Vol. 7, Iss. 6 — Jun. 1, 2011
  • pp: 325–329

Effects of Gamma Irradiation and Electrical Stress on a-Si:H Thin-Film Transistors for Flexible Electronics and Displays

Edward H. Lee, Anil Indluru, David R. Allee, Lawrence T. Clark, Keith E. Holbert, and Terry L. Alford

Journal of Display Technology, Vol. 7, Issue 6, pp. 325-329 (2011)

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The change in electrical characteristics of a-Si:H thin-film transistors (TFTs) was determined in the presence of electrical gate bias stress, gamma radiation, and both simultaneously, simulating the harsh environment of space. Multiple TFTs were tested under each condition, and the current–voltage characteristics were measured. The results show the gate bias stress increasing the threshold voltage (Vt) with power law time dependence while the gamma irradiation decreases threshold voltage for all working transistors. When both the irradiation and gate bias stress were applied simultaneously, the Vt initially increased with electrical stress and then decreased as the gamma radiation dominated. Changes in effective mobility were also extracted and detailed analysis of the current-voltage characteristics indicated that the gamma radiation creates interface traps and electron-hole pairs whereas the gate stress produces defect states in the amorphous silicon.

© 2011 IEEE

Edward H. Lee, Anil Indluru, David R. Allee, Lawrence T. Clark, Keith E. Holbert, and Terry L. Alford, "Effects of Gamma Irradiation and Electrical Stress on a-Si:H Thin-Film Transistors for Flexible Electronics and Displays," J. Display Technol. 7, 325-329 (2011)

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  1. L. Zhou, T. Jackson, E. Brandon, W. West, "Flexible substrate a-Si:H TFTs for space applications," Device Res, Conf, Dig, (2004) pp. 123-124.
  2. D. R. Allee, L. T. Clark, B. D. Vogt, R. Shringarpure, S. M. Venugopal, S. G. Uppili, K. Koftanoglu, H. Shivalingaiah, Z. P. Li, J. J. R. Fernando, E. J. Bawolek, S. O'Rourke, "Circuit-level impact of a-Si:H thin-film-transistor degradation effects," IEEE Trans. Electron Devices 56, 1166-1176 (2009).
  3. S. Dean, R. Wehrspohn, M. Powell, "Unification of time and temperature dependence of dangling-bond-defect creation and removal in amorphous silicon thin-film transistors," Phys. Rev. B 58, 12625-12628 (1998).
  4. S. Dean, M. Powell, "Field-effect conductance in amorphous silicon thin-film transistors with a defect pool density of sates," J. Appl. Phys. 74, 6655-6666 (1993).
  5. R. Shringarpure, S. Venugopal, Z. Li, L. Clark, D. R. Allee, E. Bawolek, D. Toy, "Circuit simulation of threshold voltage degradation in a-Si:H TFTs fabricated at 175$^{\circ}$C," IEEE Trans. Electron Devices 54, 1781-1783 (2007).
  6. M. J. Powell, C. Van Berkel, J. R. Hughes, "Time and temperature dependent of instability mechanisms in amorphous silicon thin-film-transistors," Appl. Phys. Lett. 54, 1323-1325 (1989).
  7. N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiez, S. Kaschieva, "Effects of gammaray irradiation on polycrystalline silicon thin-film transistors," Microelectron. Rel. 43, 57-60 (2003).
  8. I. D. French, A. J. Snell, P. G. LeComber, J. H. Stephen, "The effect of gamma-irradiation on amorphous silicon field effect transistors," Appl. Phys. A 31, 19-22 (1983).
  9. J. M. Boudry, L. E. Antonuk, "Radiation damage of amorphous silicon thin-film, field-effect transistors," Med. Phys. 23, 743-754 (1996).
  10. A. Nathan, K. Kumar, P. Sakariya, S. Servati, S. Sambandan, D. Striakhilev, "Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic," IEEE. J. Solid-State Circuits 39, 1477-1486 (2004).
  11. J. Kanichi, S. Martin, Thin Film Transistors (Marcel Dekker, 2003) pp. 87.

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