Abstract
Mixed-oxide thin-film transistors (TFTs) have been
extensively researched due to their improved stability under
electrical bias stress compared to amorphous-silicon TFTs.
However, there are many challenges before they can reach the
manufacturing stage. At the Flexible Display Center (FDC),
Arizona State University, Tempe, we are developing a low
temperature indium–zinc–oxide (IZO) TFT process suitable for
flexible substrates such as polyethylene naphthalate (PEN). We
report the effect of bias stress on the performance of these IZO
TFTs and compare it with a-Si:H TFTs. We also report the design
and fabrication of a 3.8-in QVGA electrophoretic display on PEN
substrate using IZO TFT backplane.
© 2011 IEEE
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