Thin-films of copper oxide (Cu<sub>x</sub>O) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure (O<sub>PP</sub>). A metallic Cu film with cubic structure obtained from 0% O<sub>PP</sub> has been transformed to cubic Cu<sub>2</sub>O phase for the increase in O<sub>PP</sub> to 9% but then changed to monoclinic CuO phase (for O<sub>PP</sub> ≥ 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu<sub>x</sub>O films produced with O<sub>PP</sub> ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.
© 2011 IEEE
V. Figueiredo, E. Elangovan, R. Barros, J. V. Pinto, T. Busani, R. Martins, and Elvira Fortunato, "p-Type CuxO Films Deposited at Room Temperature for Thin-Film Transistors," J. Display Technol. 8, 41-47 (2012)