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Journal of Display Technology

Journal of Display Technology


  • Vol. 8, Iss. 10 — Oct. 1, 2012
  • pp: 617–622

Optical Properties of a-SiGe:H Thin Film Transistor for Infrared Image Sensors in Touch Sensing Display

Sang Youn Han, Kyung Tea Park, Ho Sik Jeon, Yang Wook Heo, and Byung Seong Bae

Journal of Display Technology, Vol. 8, Issue 10, pp. 617-622 (2012)

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We report the effects of monochromatic illumination on the electrical performance of a-SiGe:H thin-film transistor (TFT) and the use of this device as infrared (IR) image-sensing touch displays. In order to reduce the inevitable incidence of visible light into device, the visible cutting layer was designed, which played a critical role in reducing the optical noise from visible light. When the photo response was observed in real liquid crystal display (LCD) operation environment, it showed the display contents dependence, meaning that the supply of external IR light source for the touch sensing would be effective independent of any ambient light condition. Additionally, the optical noise from the display operation was eliminated using the block operation as well as the backlight IR light-emitting diode (LED) light modulation. From these, the clear touch images were successfully obtained in the a-SiGe:H photosensor embedded LCD panel.

© 2012 IEEE

Sang Youn Han, Kyung Tea Park, Ho Sik Jeon, Yang Wook Heo, and Byung Seong Bae, "Optical Properties of a-SiGe:H Thin Film Transistor for Infrared Image Sensors in Touch Sensing Display," J. Display Technol. 8, 617-622 (2012)

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