Abstract
We demonstrated the electro-optical characteristics of
gallium nitride (GaN)-based ultraviolet (UV) light emitting diodes (LEDs)
with sputtered aluminum nitride (AlN) nucleation layer. The introduction of
the ex situ sputtered AlN nucleation
layer improved the crystal quality of the GaN and the n-AlGaN layer of the
GaN-based UV LEDs. Hence, the 20-mA output power of UV LEDs with ex situ AlN nucleation layers is higher than
that of UV LEDs with GaN nucleation layers. In addition, the enhanced power
output of UV LEDs with ex situ AlN
nucleation could reach around 52% in magnitude at peak emission wavelengths
of 370 nm compared with power outputs of UV LEDs with GaN nucleation layers.
Furthermore, UV LEDs with ex situ AlN
nucleation show improved reliability. The UV LEDs with ex
situ AlN nucleation layer revealed a power output drop of around
9% within 168 hours , which is less
than the around 14% power drop of UV LEDs with GaN nucleation layer.
© 2013 IEEE
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