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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 12 — Dec. 1, 2013
  • pp: 953–956

Efficiency Improvement of Short-Period InGaN/GaN Multiple-Quantum Well Solar Cells With ${{H}} _{2}$ in the GaN Cap Layer

Wei-Chih Lai, Ya-Yu Yang, and Ray-Hua Horng

Journal of Display Technology, Vol. 9, Issue 12, pp. 953-956 (2013)


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Abstract

The thick-well InGaN/GaN short period multiple quantum well solar cells (SCs) with ${{H}} _{2}$ in the GaN cap layer exhibits an improved open-circuit voltage, fill factor, and conversion efficiency ( $\eta \%$ ) compared with those of SCs without the ramped ${{H}} _{2}$ in the GaN cap layer. The $\eta \%$ of the SC with the ramped ${{H}} _{2}$ in the GaN cap layer (0.77%) shows a 67.4% improvement compared with that of the SC without the ramped ${{H}} _{2}$ (0.46%). Furthermore, the $\eta \%$ of SC with patterned sapphire substrate (PSS) (1.36%) indicates a 76.6% improvement compared with that of SC without PSS (0.77%).

© 2013 IEEE

Citation
Wei-Chih Lai, Ya-Yu Yang, and Ray-Hua Horng, "Efficiency Improvement of Short-Period InGaN/GaN Multiple-Quantum Well Solar Cells With ${{H}} _{2}$ in the GaN Cap Layer," J. Display Technol. 9, 953-956 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-12-953

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