A new level shifter circuit suitable for implementation using n-channel oxide thin-film transistors (TFTs) is reported. This level shifter is designed to convert a single 10 V input signal into a 20 V output signal. In order to raise the output voltage up to <i>V</i><sub>DD</sub> in spite of the large zero-<i>V</i><sub>GS</sub> current of the oxide TFT, negative <i>V</i><sub>GS</sub> is applied to the pull-down TFTs. Simulation and fabrication results show that the level shifter operates correctly with oxide TFTs and that the power consumption is as low as 0.2 mW at an input signal frequency of 10 kHz.
© 2013 IEEE
Sang Yeon Kim, Joon Dong Kim, Yeon Kyung Kim, Hong Kyun Lym, Jin Tae Kim, Hwan Sool Oh, Jae Eun Pi, Min Ki Ryu, Chi Sun Hwang, Sang-Hee Ko Park, Byoung Gon Yu, and Kee Chan Park, "A Low-Power Single-Input Level Shifter for Oxide Thin-Film Transistors," J. Display Technol. 9, 71-73 (2013)