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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 4 — Apr. 1, 2013
  • pp: 244–248

Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes

Yun Li, You Gao, Miao He, Jun Zhou, Yan Lei, Li Zhang, Kebao Zhu, and Yulong Chen

Journal of Display Technology, Vol. 9, Issue 4, pp. 244-248 (2013)


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Abstract

A design approach is proposed to improve the performances of blue InGaN light-emitting diodes (LEDs) at high current by using of the polarization-matched n-type AlGaInN electron-blocking layer (EBL) instead of conventional EBLs, owing to the more uniform carrier distribution across the multiply quantum well (MQW) active regions. And the response parameters of the blue InGaN LEDs, such as the radiative recombination rate, the internal quantum efficiency and output power, are calculated by the advanced physical model of semiconductor devices (APSYS) software. The simulation results reveal that the total power and the radiative recombination rates of the blue InGaN LEDs with the n-type AlGaInN EBL have been greatly promoted, and their efficiency droop has also been evidently moderated, compared with that of the LEDs with three types of EBL which are p-type AlGaN EBL, p-type AlGaInN EBL and n-type AlGaN EBL.

© 2013 IEEE

Citation
Yun Li, You Gao, Miao He, Jun Zhou, Yan Lei, Li Zhang, Kebao Zhu, and Yulong Chen, "Effect of Polarization-Matched n-Type AlGaInN Electron-Blocking Layer on the Optoelectronic Properties of Blue InGaN Light-Emitting Diodes," J. Display Technol. 9, 244-248 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-4-244

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