Abstract

In this study, we have systematically investigated the effect of Si doping level in the <i>n</i>-cladding layer on the performance of InGaN/GaN-based light-emitting diodes (LEDs). Detailed structural, optical and electrical properties of the sample with different Si doping level were studied. Based on these investigations, it was found that with a low level of Si doping (0.738 nmol/min, ~ 5.4 × 10¹⁷ cm³), the subsequent multiple-quantum-well (MQW) structure showed superior crystalline quality with low-density threading dislocations (TDs); however, the operation voltage of the LED chips became unbearable. On the other hand, the highly-doped (14.40 nmol/min, ~ 1.1 × 10¹⁹ cm³) samples showed a substantially lower operation voltage, but the MQW quality deteriorated with much higher TD density. Finally, the effect of inserting a 100-nm-thick undoped spacer GaN layer between the <i>n</i>-cladding layer and active layers was also investigated. The electrical and emission properties both deteriorated while the crystalline quality improved for LEDs with this structure, proving the importance of electron injection on the performance of LEDs.

© 2013 IEEE

Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer

Binglei Fu, Junjie Kang, Tongbo Wei, Zhiqiang Liu, Zhe Liu, Naixin Liu, Zhuo Xiong, Zhi Li, Xuecheng Wei, Hongxi Lu, Xiaoyan Yi, Jinmin Li, and Junxi Wang
Opt. Express 22(S5) A1284-A1291 (2014)

Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer

Xixia Tao, Junlin Liu, Jianli Zhang, Chunlan Mo, Longquan Xu, Jie Ding, Guangxu Wang, Xiaolan Wang, Xiaoming Wu, Zhijue Quan, Shuan Pan, Fang Fang, and Fengyi Jiang
Opt. Mater. Express 8(5) 1221-1230 (2018)

Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes

Kwanjae Lee, Cheul-Ro Lee, Jin Hong Lee, Tae-Hoon Chung, Mee-Yi Ryu, Kwang-Un Jeong, Jae-Young Leem, and Jin Soo Kim
Opt. Express 24(7) 7743-7751 (2016)

Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers

Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, and Seong-Ju Park
Opt. Express 22(S4) A1164-A1173 (2014)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

Zabu Kyaw, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Zhen Gang Ju, Xue Liang Zhang, Yun Ji, Namig Hasanov, Binbin Zhu, Shunpeng Lu, Yiping Zhang, Xiao Wei Sun, and Hilmi Volkan Demir
Opt. Express 22(1) 809-816 (2014)