The performance of InGaN/GaN multiple quantum wells (MQWs) blue light-emitting diodes (LEDs) was improved by inserting a thin Mg-delta-doped hole injection layer at the end of the MQWs. The forward- and reverse-leakage currents were significantly reduced compared with those of the LEDs without the inserting layer. The light output power was enhanced by 13% at a 350 mA injection current. The improved performance could be ascribed to the dislocation suppression and hole concentration enhancement in the p-type GaN by inserting the Mg-delta-doped structure.
© 2013 IEEE
Yulun Xian, Shanjin Huang, Zhiyuan Zheng, Bingfeng Fan, Zimin Chen, Zhisheng Wu, Gang Wang, Baijun Zhang, and Hao Jiang, "Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer," J. Display Technol. 9, 255-259 (2013)