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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 4 — Apr. 1, 2013
  • pp: 255–259

Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer

Yulun Xian, Shanjin Huang, Zhiyuan Zheng, Bingfeng Fan, Zimin Chen, Zhisheng Wu, Gang Wang, Baijun Zhang, and Hao Jiang

Journal of Display Technology, Vol. 9, Issue 4, pp. 255-259 (2013)


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Abstract

The performance of InGaN/GaN multiple quantum wells (MQWs) blue light-emitting diodes (LEDs) was improved by inserting a thin Mg-delta-doped hole injection layer at the end of the MQWs. The forward- and reverse-leakage currents were significantly reduced compared with those of the LEDs without the inserting layer. The light output power was enhanced by 13% at a 350 mA injection current. The improved performance could be ascribed to the dislocation suppression and hole concentration enhancement in the p-type GaN by inserting the Mg-delta-doped structure.

© 2013 IEEE

Citation
Yulun Xian, Shanjin Huang, Zhiyuan Zheng, Bingfeng Fan, Zimin Chen, Zhisheng Wu, Gang Wang, Baijun Zhang, and Hao Jiang, "Performance Improvement of Nitride-Based Light-Emitting Diode With a Thin Mg-Delta-Doped Hole Injection Layer," J. Display Technol. 9, 255-259 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-4-255

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