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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 4 — Apr. 1, 2013
  • pp: 260–265

Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes

Zhiyuan Zheng, Zimin Chen, Yingda Chen, Hualong Wu, Shanjin Huang, Bingfeng Fan, Zhisheng Wu, Gang Wang, and Hao Jiang

Journal of Display Technology, Vol. 9, Issue 4, pp. 260-265 (2013)


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Abstract

We report the observation of electroluminescence from the first to fourth quantum wells (QWs) from the p-GaN layer in InGaN/GaN multiple-QW light-emitting diodes (LEDs) with various indium contents (4%–16%) in each QW. The investigated LED sample showed a lower turn-on voltage and ideality factor as well as a reduction of etching pit density compared with the reference sample. Also, the X-ray reciprocal space maps revealed a partial strain relaxation in the active region. The enhanced hole injection efficiency was attributed to the weakening of strain-induced polarization field in the QWs and the good crystalline quality.

© 2013 IEEE

Citation
Zhiyuan Zheng, Zimin Chen, Yingda Chen, Hualong Wu, Shanjin Huang, Bingfeng Fan, Zhisheng Wu, Gang Wang, and Hao Jiang, "Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes," J. Display Technol. 9, 260-265 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-4-260

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