OSA's Digital Library

Journal of Display Technology

Journal of Display Technology


  • Vol. 9, Iss. 4 — Apr. 1, 2013
  • pp: 292–296

Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of GaN-Based Light-Emitting Diodes

Hung-Ming Chang, Wei-Chih Lai, and Shoou-Jinn Chang

Journal of Display Technology, Vol. 9, Issue 4, pp. 292-296 (2013)

View Full Text Article

Acrobat PDF (1448 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

  • Export Citation/Save Click for help


We have studied the initial growth modes of GaN on patterned sapphire substrate (PSS) with different initial TMGa flow rates. The FWHM of the (102) XRD spectrum of GaN on PSS increased from 470 to 580 arcsec when the initial TMGa flow rate was increased from 80 to 200 sccm. A low TMGa flow rate sufficiently suppresses GaN island growth on the top of the pattern and hence improves GaN crystal quality. The electrical and optical characteristics of GaN-based LEDs on PSS with low initial TMGa were also improved. More than 90% of the GaN LED chips with low initial GaN growth rate can hold the 1-kV machine-mode electrostatic discharge level.

© 2013 IEEE

Hung-Ming Chang, Wei-Chih Lai, and Shoou-Jinn Chang, "Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of GaN-Based Light-Emitting Diodes," J. Display Technol. 9, 292-296 (2013)

Sort:  Year  |  Journal  |  Reset


  1. S. Nakamura, T. Mukai, M. Senoh, "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes," Appl. Phys. Lett. 64, 1687-1689 (1994).
  2. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, U. H. Liaw, "InGaN–GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Sel. Top. Quantum Electron. 8, 278-283 (2002).
  3. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen, J. M. Tsai, "400-nm InGaN–GaN and InGaN–AlGaN multiquantum well light-emitting diodes," IEEE J. Sel. Top. Quantum Electron. 8, 744-748 (2002).
  4. J. Zhang, H. Zhao, N. Tansu, "Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers," Appl. Phys. Lett. 97, (2010) Art. ID 111105.
  5. Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, T. Muka, "Ultra-high efficiency white light emitting diodes," Jpn. J. Appl. Phys. 45, 1084- (2006).
  6. F. A. Pounce, D. P. Bour, "Nitride-based semiconductors for blue and green light-emitting devices," Nature 386, 351-359 (1997).
  7. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J. Appl. Phys. 41, 1431- (2002).
  8. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, J. S. Fang, "Enhanced output power of near-ultraviolet InGaN–GaN LEDs grown on patterned sapphire substrates," IEEE Photon. Technol. Lett. 17, 288-290 (2005).
  9. Z. H. Feng, K. M. Lau, "Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates," IEEE Photon. Technol. Lett. 17, 1812-1814 (2005).
  10. Y. J. Lee, H. C. Kuo, T. C. Lu, S. C. Wang, K. W. Ng, K. M. Lau, Z. P. Yang, S. P. Chang, S. Y. Lin, "Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces," J. Lightw. Technol. 26, 1455-1463 (2008).
  11. Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire," J. Cryst. Growth 312, 1311-1315 (2010).
  12. Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, N. Tansu, "Metalorganic vapor phase epitaxy of III-nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode," IEEE J. Sel. Top. Quantum Electron. 15, 1066-1072 (2009).
  13. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett. 98, (2011) Art. ID 151102.
  14. R. M. Farrell, E. C. Young, F. Wu, S. P. DenBaars, J. S. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices," Semicond. Sci. Technol. 27, (2012) Art. ID 024001-024001-14.
  15. D. A. Browne, E. C. Young, J. R. Lang, C. A. Hurni, J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy," J. Vac. Sci. Technol. 30, (2012) Art. ID 041513.
  16. H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, N. Tansu 1, "Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells," Opt. Express 19, A-991-A-1007 (2011).
  17. J. Zhang, N. Tansu, "Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes," J. Appl. Phys. 110, (2011) Art. ID 113110.
  18. H. P. Zhao, G. Y. Liu, X.-H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, N. Tansu, "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime," IET Optoelectron. 3, 283-295 (2009).
  19. J. H. Lee, D. Y. Lee, B. W. Oh, J. H. Lee, "Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate," IEEE Trans. Electron Devices 57, 157-163 (2010).
  20. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu, "Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact," IEEE Photon. Technol. Lett. 16, 1002-1004 (2004).
  21. C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, P. T. Wang, "Nitride-based light-emitting diodes with p-AlInGaN surface layers," IEEE Electron Device Lett. 52, 2346-2349 (2005).
  22. M. Ohring, Materials Science of Thin Films: Deposition and Structure (Academic, 2000).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article

OSA is a member of CrossRef.

CrossCheck Deposited