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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 5 — May. 1, 2013
  • pp: 353–358

GaN-Based Light-Emitting Diodes With Step Graded-Refractive Index (ZnO)x(SiO2)1-x Micropillar Array

Hung-Ming Chang, Ya-Yu Yang, Wei-Chih Lai, Shuguang Li, Yu-Ru Lin, Zhi-Yong Jiao, and Shoou-Jinn Chang

Journal of Display Technology, Vol. 9, Issue 5, pp. 353-358 (2013)


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Abstract

Step graded-refractive index (SGRI) (ZnO)x(SiO2)1-x micropillar multilayers have been introduced and demonstrated on GaN-based LEDs combined with the mesh ITO. The SGRI (ZnO)x(SiO2)1-x micropillars were produced by controlling the Zn/Zn+Si ratio of co-sputtered ZnO and SiO2. The introduced three-layered SGRI (ZnO)x(SiO2)1-x micropillars improved both critical angle inside GaN LEDs and Fresnel transmittance coefficient (ηFr) as well as had better light coupling into the micropillars. Moreover, a high number of layers of the SGRI micropillars would aid the light coupled in the pillars to escape from the side wall of the pillar. LEDs with three-layered SGRI (ZnO)x(SiO2)1-x micropillars exhibited output power enhancements of 12.2% with a 20 mA Vf of 3.19 V. The output power of the mesh ITO LEDs with SGRI (ZnO)x(SiO2)1-x micropillars was further enhanced to 15.3% by improving the current spreading.

© 2012 IEEE

Citation
Hung-Ming Chang, Ya-Yu Yang, Wei-Chih Lai, Shuguang Li, Yu-Ru Lin, Zhi-Yong Jiao, and Shoou-Jinn Chang, "GaN-Based Light-Emitting Diodes With Step Graded-Refractive Index (ZnO)x(SiO2)1-x Micropillar Array," J. Display Technol. 9, 353-358 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-5-353

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