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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 6 — Jun. 1, 2013
  • pp: 504–510

Near-Field Microwave Investigation of Electrical Properties of Graphene-ITO Electrodes for LED Applications

Tamara Monti, Andrea Di Donato, Davide Mencarelli, Giuseppe Venanzoni, Antonio Morini, and Marco Farina

Journal of Display Technology, Vol. 9, Issue 6, pp. 504-510 (2013)


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Abstract

We propose a method to evaluate the electrical properties of nanoscale layered materials. This study is important for the potential application of these structures in light emitting diode electrodes. For this purpose we measure the reflection coefficient of a microwave signal recorded by a near-field Scanning Microwave Microscope. This method allows the non-contact measurement of the sheet resistance of the material under analysis. It provides detailed maps of the electrical properties of a micrometric area under test to assay its uniformity. In particular, we have applied this technique to a multilayer material composed by an Indium–Tin–Oxide film and few layer graphene.

© 2013 IEEE

Citation
Tamara Monti, Andrea Di Donato, Davide Mencarelli, Giuseppe Venanzoni, Antonio Morini, and Marco Farina, "Near-Field Microwave Investigation of Electrical Properties of Graphene-ITO Electrodes for LED Applications," J. Display Technol. 9, 504-510 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-6-504


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