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Journal of Display Technology

Journal of Display Technology


  • Vol. 9, Iss. 8 — Aug. 1, 2013
  • pp: 678–682

360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays

Zhao Jun Liu, Wing Cheung Chong, Ka Ming Wong, and Kei May Lau

Journal of Display Technology, Vol. 9, Issue 8, pp. 678-682 (2013)

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In this paper, we describe the design and fabrication of 360 PPI flip-chip mounted active matrix (AM) addressable light emitting diode on silicon (LEDoS) micro-displays. The LEDoS micro-displays are self-emitting devices which have higher light efficiency than liquid crystal based displays (LCDs) and longer lifetime than organic light emitting diodes (OLEDs) based displays . The LEDoS micro-displays were realized by integrating monolithic LED micro-arrays and silicon-based integrated circuit using a flip-chip bonding technique. The active matrix driving scheme was designed on the silicon to provide sufficient driving current and individual controllability of each LED pixel. Red, green, blue and Ultraviolet (UV) LEDoS micro-displays with a pixel size of 50 $\mu$ m and pixel pitch of 70 $\mu$ m were demonstrated. With a peripheral driving board, the LEDoS micro-display panels were programmed to show representative images and animations.

© 2013 IEEE

Zhao Jun Liu, Wing Cheung Chong, Ka Ming Wong, and Kei May Lau, "360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays," J. Display Technol. 9, 678-682 (2013)

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