OSA's Digital Library

Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 694–698

Effects of Gate Insulator on Thin-Film Transistors With ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition

Yumi Kawamura, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka

Journal of Display Technology, Vol. 9, Issue 9, pp. 694-698 (2013)


View Full Text Article

Acrobat PDF (777 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations
  • Export Citation/Save Click for help

Abstract

Zinc oxide (ZnO) thin films have attracted significant attention for application in thin-film transistors (TFTs) due to their specific characteristics, such as high mobility and transparency. The atomic layer deposition (ALD) thin film is deposited with alternating exposures of a source gas and oxidant. The ALD method keeps fabrication temperature of ZnO TFTs low. In this study, we investigated the effects of gate insulator properties on the performance of TFTs with a ZnO channel layer deposited by plasma-assisted ALD (PAALD). The TFTs with ${{Al}}_{2}{{O}}_{3}$ gate insulator indicated high performance (5.1 ${{cm}}^{2}/{{V}}\cdot{{s}}$ field effect mobility) without thermal annealing. This result indicated a high-performance ZnO TFT with films deposited by PAALD can be obtained at temperatures below 100 $^{\circ}{{C}}$ .

© 2012 IEEE

Citation
Yumi Kawamura, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka, "Effects of Gate Insulator on Thin-Film Transistors With ZnO Channel Layer Deposited by Plasma-Assisted Atomic Layer Deposition," J. Display Technol. 9, 694-698 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-9-694


Sort:  Year  |  Journal  |  Reset

References

  1. Y. Kuo, Thin Film Transistors: Materials and Processes (Kluwer Academic, 2004) pp. 6-10.
  2. T. Sameshima, J. Non-Cryst. Solids 1196, 227-230 (1998).
  3. H. Kakinura, Phys. Rev. B 39, 10473-10476 (1989).
  4. R. B. M. Cross, M. M. D. Souza, Appl. Phys. Lett. 89, 263513 (2006).
  5. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, H. Morkoç, J. Appl. Phys. 98, 041301 (2005).
  6. P. F. Carcia, R. S. McLearn, M. H. Reilly, G. Nunes, Appl. Phys. Lett. 82, 1117-1119 (2003).
  7. E. Fortunato, A. Goncalves, A. Pimentel, P. Barquinha, G. Goncalves, L. Pereira, I. Ferreira, R. Martins, Appl. Phys. A 96, 197-205 (2009).
  8. R. L. Hoffman, B. J. Norris, J. F. Wager, Appl. Phys. Lett. 82, 733-735 (2003).
  9. S. Matsuda, K. Kitamura, Y. Okumura, S. Miyatake, J. Appl. Phys. 93, 1624-1630 (2003).
  10. E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, R. Martins, Thin Solid Films 487, 205-211 (2005).
  11. K. Murata, K. Washio, N. Miyatake, Y. Mori, H. Tachibana, Y. Uraoka, T. Fuyuki, ECS Trans. 11, 31-38 (2007).
  12. S. Kwon, S. Bang, S. Lee, S. Jeon, W. Jeong, H. Kim, S. C. Gong, H. J. Chang, H. Park, H. Jeon, Semicond. Sci. Technol. 24, 035015 (2009).
  13. D. H. Levy, D. Freeman, S. F. Nelson, P. J. Cowdery-Corvan, L. M. Irving, Appl. Phys. Lett. 92, 192101 (2008).
  14. S. J. Lim, S. J. Kwon, H. G. Kim, J. S. Park, Appl. Phys. Lett. 91, 183517 (2007).
  15. Y. Kawamura, N. Hattori, N. Miyatake, K. Murata, M. Horita, Y. Uraoka, Jpn. J. Appl. Phys. 50, 40DF05 (2011).
  16. Y. Kawamura, M. Horita, Y. Uraoka, Jpn. J. Appl. Phys. 49, 04DF19 (2010).
  17. R. Kuse, M. Kundu, T. Yasuda, N. Miyata, A. Toriumi, J. Appl. Phys. 94, 6411-6416 (2003).
  18. I. S. Joen, J. Park, D. Eom, C. S. Hwang, H. J. Kim, C. J. Park, H. Y. Cho, J. H. Lee, H. K. Kang, Jpn. J. Appl. Phys. 42, 1222-1222 (2003).
  19. Y. Kawamura, N. Hattori, N. Miyatake, M. Horita, Y. Ishikawa, Y. Uraoka, Jpn. J. Appl. Phys. 51, 02BF04 (2012).
  20. R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, E. Fortunato, J. Appl. Phys. 101, 044505 (2007).
  21. W. Lim, E. A. Douglas, D. P. Norton, S. J. Pearton, F. Ren, Y.-W. Heo, S. Y. Son, J. H. Yuh, Appl. Phys. Lett. 96, 053510 (2010).

Cited By

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited