Abstract
Zinc oxide (ZnO) thin films have attracted significant
attention for application in thin-film transistors (TFTs) due to their specific
characteristics, such as high mobility and transparency. The atomic layer
deposition (ALD) thin film is deposited with alternating exposures of a source
gas and oxidant. The ALD method keeps fabrication temperature of ZnO TFTs
low. In this study, we investigated the effects of gate insulator properties
on the performance of TFTs with a ZnO channel layer deposited by plasma-assisted
ALD (PAALD). The TFTs with
${{Al}}_{2}{{O}}_{3}$
gate insulator indicated high performance (5.1
${{cm}}^{2}/{{V}}\cdot{{s}}$
field
effect mobility) without thermal annealing. This result indicated a high-performance
ZnO TFT with films deposited by PAALD can be obtained at temperatures below
100
$^{\circ}{{C}}$
.
© 2012 IEEE
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