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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 699–703

Effect of ${{SiO}}_{2}$ and/or ${{SiN}}_{x}$ Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors

Dong Han Kang, In Kang, Sang Hyun Ryu, Young Sik Ahn, and Jin Jang

Journal of Display Technology, Vol. 9, Issue 9, pp. 699-703 (2013)


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Abstract

We report the post-annealing effect on the performance of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with self-aligned coplanar structure. The a-IZGO layer was passivated with ${{SiO}}_{2}$ or ${{SiN}}_{x}$ by plasma enhanced chemical vapor deposition (PECVD). The field-effect mobility of a-IGZO TFT with ${{SiN}}_{x}$ is almost unchanged by extending the post-annealing time at 250 $^{\circ}{{C}}$ , but that of ${{SiO}}_{2}$ passivated TFT significantly degrades by increasing annealing time. It is found that the resistivity of the a-IGZO under ${{SiN}}_{x}$ is low enough and thus can be good conduction path, leading to the high performance TFT. It is also found that the interface trap density $(N_{it})$ between a-IGZO TFT with ${{SiN}}_{x}$ passivation decreases from ${{3.0}}\times {{10}}^{11}$ to $1.54\times 10^{11}\ {{cm}}^{-2}\ {{eV}}^{-1}$ , and the stability of the a-IGZO TFT with ${{SiN}}_{x}$ passivation is significantly improved by long post-annealing.

© 2013 IEEE

Citation
Dong Han Kang, In Kang, Sang Hyun Ryu, Young Sik Ahn, and Jin Jang, "Effect of ${{SiO}}_{2}$ and/or ${{SiN}}_{x}$ Passivation Layer on Thermal Stability of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors," J. Display Technol. 9, 699-703 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-9-699

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