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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 710–715

Solution-Processed Dual-Gate Polymer Field-Effect Transistors for Display Applications

Tae-Jun Ha, Prashant Sonar, and Ananth Dodabalapur

Journal of Display Technology, Vol. 9, Issue 9, pp. 710-715 (2013)


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Abstract

We describe the advantages of dual-gate thin-film transistors (TFTs) for display applications. We show that in TFTs with active semiconductor layers composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is increased, the off-current is reduced, and the sub-threshold swing is improved compared to single-gate devices. Charge transport measurements in steady-state and under non-quasi-static conditions reveal the reasons for this improved performance. We show that in dual-gate devices, a much smaller fraction of charge carriers move in slow trap states. We also compare the activation energies for charge transport in the top-gate and bottom-gate configurations.

© 2012 IEEE

Citation
Tae-Jun Ha, Prashant Sonar, and Ananth Dodabalapur, "Solution-Processed Dual-Gate Polymer Field-Effect Transistors for Display Applications," J. Display Technol. 9, 710-715 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-9-710

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