We describe the advantages of dual-gate thin-film transistors (TFTs) for display applications. We show that in TFTs with active semiconductor layers composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is increased, the off-current is reduced, and the sub-threshold swing is improved compared to single-gate devices. Charge transport measurements in steady-state and under non-quasi-static conditions reveal the reasons for this improved performance. We show that in dual-gate devices, a much smaller fraction of charge carriers move in slow trap states. We also compare the activation energies for charge transport in the top-gate and bottom-gate configurations.
© 2012 IEEE
Tae-Jun Ha, Prashant Sonar, and Ananth Dodabalapur, "Solution-Processed Dual-Gate Polymer Field-Effect Transistors for Display Applications," J. Display Technol. 9, 710-715 (2013)