Abstract
We describe the advantages of dual-gate thin-film transistors (TFTs)
for display applications. We show that in TFTs with active semiconductor layers
composed of diketopyrrolopyrrole-naphthalene copolymer, the on-current is
increased, the off-current is reduced, and the sub-threshold swing is improved
compared to single-gate devices. Charge transport measurements in steady-state
and under non-quasi-static conditions reveal the reasons for this improved
performance. We show that in dual-gate devices, a much smaller fraction of
charge carriers move in slow trap states. We also compare the activation energies
for charge transport in the top-gate and bottom-gate configurations.
© 2012 IEEE
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