Nitrogen doped ZnO (NZO) thin films, at different
flow rates have been
deposited on glass substrates by pulsed DC reactive magnetron sputtering technique.
The effect of
flow rate (1.0 sccm – 3.0 sccm) on the structural,
optical, electrical and chemical state of N has been studied. With the effect
flow rate: the crystallinity of the films decreased, tensile stress
is developed, optical transmittance decreased (80% to 60%), conductivity decreased
till 1.5 sccm and films were n-type conducting. At 2.0 sccm and 2.5 sccm of
rates, NZO thin films showed p-type conductivity. The changes in the magnitude
and type of conductivity have a direct relation with the changes observed
in N-chemical state in ZnO lattice. p- NZO thin films are electrically unstable;
this instability has been explained based on the changes occurred in the N
chemical states, resulting from the stress release in NZO lattice.
© 2013 IEEE