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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 715–722

Stability Studies on Nitrogen Doped p-ZnO (NZO) Thin Films Grown by Reactive Magnetron Sputtering

R. V. Muniswami Naidu, Aryasomayajula Subrahmanyam, Arnaud Verger, and Mahaveer Kumar Jain

Journal of Display Technology, Vol. 9, Issue 9, pp. 715-722 (2013)


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Abstract

Nitrogen doped ZnO (NZO) thin films, at different ${{N}} _{2}$ flow rates have been deposited on glass substrates by pulsed DC reactive magnetron sputtering technique. The effect of ${{N}} _{2}$ flow rate (1.0 sccm – 3.0 sccm) on the structural, optical, electrical and chemical state of N has been studied. With the effect of ${{N}} _{2}$ flow rate: the crystallinity of the films decreased, tensile stress is developed, optical transmittance decreased (80% to 60%), conductivity decreased till 1.5 sccm and films were n-type conducting. At 2.0 sccm and 2.5 sccm of ${{N}} _{2}$ flow rates, NZO thin films showed p-type conductivity. The changes in the magnitude and type of conductivity have a direct relation with the changes observed in N-chemical state in ZnO lattice. p- NZO thin films are electrically unstable; this instability has been explained based on the changes occurred in the N chemical states, resulting from the stress release in NZO lattice.

© 2013 IEEE

Citation
R. V. Muniswami Naidu, Aryasomayajula Subrahmanyam, Arnaud Verger, and Mahaveer Kumar Jain, "Stability Studies on Nitrogen Doped p-ZnO (NZO) Thin Films Grown by Reactive Magnetron Sputtering," J. Display Technol. 9, 715-722 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-9-715


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References

  1. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, H. Morkoç, "A comprehensive review of ZnO materials and device," J. Appl. Phys. 98, 041301-1-041301-103 (2005).
  2. C. Klingshirn, "ZnO: From basics towards applications," Phys. Stat. Sol. (b) 244, 3027-3073 (2007).
  3. D. C. Look, B. Claflin, "p-type doping and devices based on ZnO," Phys. Stat. Sol. (b) 241, 624-630 (2004).
  4. D. C. Look, "Electrical and optical properties of p-type ZnO," Semicond. Sci. Technol. 20, 55-61 (2005).
  5. S. D. Ginley, H. Hosono, D. C. Paine, Hand Book of Transparent Conductors (Springer, 2010).
  6. T. Minami, H. Nanto, S. Takata, "Highly conductive and transparent aluminium doped zinc oxide thin films prepared by RF magnetron sputtering," Jpn. J. Appl. Phys. 23, L280-L282 (1984).
  7. S. Major, S. Kumar, M. Bhatnagar, K. L. Chopra, "Effect of hydrogen plasma treatment on transparent conducting oxides," Appl. Phys. Lett. 49, 394-396 (1986).
  8. B. H. Choi, H. B. Im, J. S. Song, K. H. Yoon, "Optical and electrical properties of ${{Ga}}_{2}{{O}}_{3}$ -doped ZnO films prepared by r.f. sputtering," Thin Solid Films 193, 712-720 (1990).
  9. A. Janotti, C. G. Van de Walle, "Native point defects in ZnO," Phys. Rev. B 76, 165202 1-22 (2007).
  10. K. Minegishi, Y. Koiwai, K. Yukinobu, K. Yano, M. Kasuga, A. Shimizu, "Growth of p-type Zinc Oxide thin films by chemical vapour deposition," Jpn. J. Appl. Phys. 36, 1453-1455 (1997).
  11. B. Yao, L. X. Guan, G. Z. Xing, Z. Z. Zhang, B. H. Li, Z. P. Wei, X. H. Wang, C. X. Cong, Y. P. Xie, Y. M. Lu, D. Z. Shen, "P-type conductivity and stability of nitrogen-doped zinc oxide prepared by magnetron sputtering," J. Luminesc. 122, 191-194 (2007).
  12. X. L. Guo, H. Tabata, T. Kawai, "Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source," J. Cryst. Growth 223, 135-139 (2000).
  13. M. Joseph, H. Tabata, H. Saeki, K. Ueda, T. Kawai, "Fabrication of the low-resistive p-type ZnO by codoping method," Phys. B: Condensed Matter 302, 140-148 (2000).
  14. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, G. Cantwell, "Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy," Appl. Phys. Lett. 81, 1830-1832 (2000).
  15. L. T. Ming, K. S. Yan, Y. M. Chun, "Nitrogen-doped p-type ZnO films prepared from nitrogen gas radiofrequency magnetron sputtering," J. Appl. Phys. 100, 053705 1-4 (2006).
  16. Y. R. Ryu, S. Zhu, D. C. Look, J. M. Wrobel, H. M. Joeng, H. W. White, "Synthesis of p-type ZnO films," J. Cryst. Growth 216, 330-334 (2000).
  17. A. Janotti, C. G. Van de Walle, "Fundamentals of zinc oxide as a semiconductor," Rep. Prog. Phys. 72, 126501 1-22 (2009).
  18. S. Maniv, W. D. Westwood, E. Colombini, "Pressure and angle of incidence effects in reactive planar magnetron sputtered ZnO layers," J. Vac. Sci. Technol. 20, 162-170 (1982).
  19. J. Tauc, Amorphous and Liquid Semiconductor (Plenum Press, 1974).
  20. J. G. Lu, Z. Z. Ye, F. Zhuge, Y. J. Zeng, B. H. Zhao, L. P. Zhu, "p-type conduction in N–Al co-doped ZnO thin films," Appl. Phys. Lett. 85, 3134-3135 (2004).
  21. L. J. van der Pauw, "A method of measuring specific resistivity and Hall effect of discs of arbitrary shape," Philips Res. Rep. 13, 1-9 (1958).
  22. S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981).
  23. S. B. Zhang, S. H. Wei, A. Zunger, "Microscopic origin of the phenomenological equilibrium “Doping limit rule” in n-type III-V semiconductors," Phys. Rev. Lett. 84, 1232-1235 (2000).
  24. J. L. Lyons, A. Janotti, C. G. Van de Walle, "Why nitrogen cannot lead to p-type conductivity in ZnO," Appl. Phys. Lett. 95, 252105 1-3 (2009).
  25. D. C. Look, Electrical Characterization of GaAs and Related Materials (Wiley, 1989).
  26. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, G. Cantwell, "Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy," Appl. Phys. Lett. 81, 1830-1832 (2000).
  27. S. A. Lenotiev, S. V. Koshcheev, V. G. Devyatov, A. E. Cherkashin, E. P. Mikheeva, "Detailed XPS and UPS studies on the band structure of ZnO," J. Struct. Chem. 38, 726-731 (1997).
  28. C. L. Perkins, S. H. Lee, X. Li, S. E. Asher, T. J. Coutts, "Identification of nitrogen chemical states in N-doped ZnO via x-ray photoelectron spectroscopy," J. Appl. Phys. 97, 034907 1-7 (2000).
  29. M. Petravic, P. N. K. Deenapanray, V. A. Coleman, C. Jagadish, K. J. Kim, B. Kim, K. Koike, S. Sasa, M. Inoue, M. Yano, "Chemical states of nitrogen in ZnO studied by near-edge X-ray absorption fine structure and core-level photoemission spectroscopies," Surface Sci. 600, L81-L85 (2006).
  30. A. Subrahmanyam, C. Suresh Kumar, Kelvin Probe for Surface Engineering: Fundamentals and Design (CRC, 2009).

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