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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 715–722

Stability Studies on Nitrogen Doped p-ZnO (NZO) Thin Films Grown by Reactive Magnetron Sputtering

R. V. Muniswami Naidu, Aryasomayajula Subrahmanyam, Arnaud Verger, and Mahaveer Kumar Jain

Journal of Display Technology, Vol. 9, Issue 9, pp. 715-722 (2013)


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Abstract

Nitrogen doped ZnO (NZO) thin films, at different ${{N}} _{2}$ flow rates have been deposited on glass substrates by pulsed DC reactive magnetron sputtering technique. The effect of ${{N}} _{2}$ flow rate (1.0 sccm – 3.0 sccm) on the structural, optical, electrical and chemical state of N has been studied. With the effect of ${{N}} _{2}$ flow rate: the crystallinity of the films decreased, tensile stress is developed, optical transmittance decreased (80% to 60%), conductivity decreased till 1.5 sccm and films were n-type conducting. At 2.0 sccm and 2.5 sccm of ${{N}} _{2}$ flow rates, NZO thin films showed p-type conductivity. The changes in the magnitude and type of conductivity have a direct relation with the changes observed in N-chemical state in ZnO lattice. p- NZO thin films are electrically unstable; this instability has been explained based on the changes occurred in the N chemical states, resulting from the stress release in NZO lattice.

© 2013 IEEE

Citation
R. V. Muniswami Naidu, Aryasomayajula Subrahmanyam, Arnaud Verger, and Mahaveer Kumar Jain, "Stability Studies on Nitrogen Doped p-ZnO (NZO) Thin Films Grown by Reactive Magnetron Sputtering," J. Display Technol. 9, 715-722 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-9-715

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