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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 723–728

Plastic Compatible Sputtered ${{Ta}}_{2}{{O}}_{5}$ Sensitive Layer for Oxide Semiconductor TFT Sensors

Rita Branquinho, Joana V. Pinto, Tito Busani, Pedro Barquinha, Luis Pereira, Pedro Viana Baptista, Rodrigo Martins, and Elvira Fortunato

Journal of Display Technology, Vol. 9, Issue 9, pp. 723-728 (2013)


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Abstract

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered ${{Ta}}_{2}{{O}}_{5}$ was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 $^{\circ}{{C}}$ and crystallize at 700 $^{\circ}{{C}}$ in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous ${{Ta}}_{2}{{O}}_{5}$ sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 $^{\circ}{{C}}$ pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 $^{\circ}{{C}}$ , which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.

© 2012 IEEE

Citation
Rita Branquinho, Joana V. Pinto, Tito Busani, Pedro Barquinha, Luis Pereira, Pedro Viana Baptista, Rodrigo Martins, and Elvira Fortunato, "Plastic Compatible Sputtered ${{Ta}}_{2}{{O}}_{5}$ Sensitive Layer for Oxide Semiconductor TFT Sensors," J. Display Technol. 9, 723-728 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-9-723

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