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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 729–734

Extended-Gate ISFETs Based on Sputtered Amorphous Oxides

Joana V. Pinto, Rita Branquinho, Pedro Barquinha, Eduardo Alves, Rodrigo Martins, and Elvira Fortunato

Journal of Display Technology, Vol. 9, Issue 9, pp. 729-734 (2013)


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Abstract

We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, ${{Ta}}_{2}{{O}}_{5}{{:SiO}}_{2}$ as the dielectric and ${{Ta}}_{2}{{O}}_{5}$ as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4–pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.

© 2012 IEEE

Citation
Joana V. Pinto, Rita Branquinho, Pedro Barquinha, Eduardo Alves, Rodrigo Martins, and Elvira Fortunato, "Extended-Gate ISFETs Based on Sputtered Amorphous Oxides," J. Display Technol. 9, 729-734 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-9-729

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