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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 735–740

p-Type ${{Cu}}_{x}{{O}}$ Thin-Film Transistors Produced by Thermal Oxidation

V. Figueiredo, J. V. Pinto, J. Deuermeier, R. Barros, E. Alves, R. Martins, and E. Fortunato

Journal of Display Technology, Vol. 9, Issue 9, pp. 735-740 (2013)


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Abstract

Thin-films of copper oxide $({{Cu}}_{x}{{O}})$ were produced by thermal oxidation of metallic copper (Cu) at different temperatures (150–450 $\ ^{\circ}{{C}}$ ). The films produced at temperatures of 200, 250 and 300 $\ ^{\circ}{{C}}$ showed high Hall motilities of 2.2, 1.9 and 1.6 ${{cm}}^{2}\ {{V}}^{-1}{{s}}^{-1}$ , respectively. Single ${{Cu}}_{2}{{O}}$ phases were obtained at 200 $\ ^{\circ}{{C}}$ and its conversion to CuO starts at 250 $\ ^{\circ}{{C}}$ . For lower thicknesses $\sim$ 40 nm, the films oxidized at 250 $\ ^{\circ}{{C}}$ showed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type ${{Cu}}_{2}{{O}}$ (at 200 $\ ^{\circ}{{C}}$ ) and CuO (at 250 $\ ^{\circ}{{C}}$ ) with On/Off ratios of ${{6}}\times {{10}}^{1}$ and ${{1}}\times {{10}}^{2}$ , respectively.

© 2013 IEEE

Citation
V. Figueiredo, J. V. Pinto, J. Deuermeier, R. Barros, E. Alves, R. Martins, and E. Fortunato, "p-Type ${{Cu}}_{x}{{O}}$ Thin-Film Transistors Produced by Thermal Oxidation," J. Display Technol. 9, 735-740 (2013)
http://www.opticsinfobase.org/jdt/abstract.cfm?URI=jdt-9-9-735

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