Abstract
Thin-films of copper oxide
$({{Cu}}_{x}{{O}})$
were produced
by thermal oxidation of metallic copper (Cu) at different temperatures (150–450
$\ ^{\circ}{{C}}$
).
The films produced at temperatures of 200, 250 and 300
$\ ^{\circ}{{C}}$
showed high Hall
motilities of 2.2, 1.9 and 1.6
${{cm}}^{2}\
{{V}}^{-1}{{s}}^{-1}$
, respectively. Single
${{Cu}}_{2}{{O}}$
phases were obtained at 200
$\
^{\circ}{{C}}$
and its conversion to CuO starts at 250
$\ ^{\circ}{{C}}$
.
For lower thicknesses
$\sim$
40 nm, the films oxidized at 250
$\ ^{\circ}{{C}}$
showed a complete conversion
to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal
oxidation of a 20 nm Cu film, obtaining p-type
${{Cu}}_{2}{{O}}$
(at 200
$\ ^{\circ}{{C}}$
)
and CuO (at 250
$\ ^{\circ}{{C}}$
) with On/Off ratios of
${{6}}\times
{{10}}^{1}$
and
${{1}}\times
{{10}}^{2}$
, respectively.
© 2013 IEEE
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