We propose underwater laser annealing (WLA) for the inactivation
of electrical defects in polycrystalline silicon thin-film transistors (poly-Si
TFTs) at super low-temperature. This technique can reduce the temperature
of inactivation process drastically, and it requires only UV laser and deionized
water. We performed WLA after the fabrication of top-gate type poly-Si TFTs.
After WLA, the field-effect mobility of poly-Si TFTs increased from 52 to
© 2013 IEEE
Emi Machida, Masahiro Horita, Koji Yamasaki, Yasuaki Ishikawa, Yukiharu Uraoka, and Hiroshi Ikenoue, "Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature," J. Display Technol. 9, 741-746 (2013)