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Journal of Display Technology

Journal of Display Technology


  • Vol. 9, Iss. 9 — Sep. 1, 2013
  • pp: 760–763

${{In}}_{2} {{O}}_{3}$ Thin Film Paper Transistors

Florin Gherendi, Magdalena Nistor, and Nicolae B. Mandache

Journal of Display Technology, Vol. 9, Issue 9, pp. 760-763 (2013)

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In this work, we report on the fabrication of hybrid n-channel thin film transistors using paper as substrate and gate insulator, and indium oxide $({{In}}_{2}{{O}}_{3})$ thin films as channel layer, and contacts for the source, drain and gate respectively. Capacitor paper having 10 $\mu{{m}}$ thickness was used. ${{In}}_{2} {{O}}_{3}$ thin films were grown by pulsed electron beam deposition method at room temperature. The gate leakage current was 20 nA at 5 V and the on/off current ratio up to ${{6}}\times {{10}}^{4}$ , limited mainly by the gate leakage. The transfer characteristics $-{I}_{d} ({V}_{\rm gs})$ – showed a memory effect with a threshold voltage of 0.8 V in “0” state and $-{{3.6}}~{{V}}$ in “1” state. The drain current-voltage characteristics family $-{I}_{d} ({V}_{\rm ds})$ – showed saturation currents up to 3.5 mA in “1”state and about ${{500}}~\mu{{A}}$ in “0” state. The subthreshold swing was 0.3-0.5 V/decade.

© 2013 IEEE

Florin Gherendi, Magdalena Nistor, and Nicolae B. Mandache, " ${{In}}_{2} {{O}}_{3}$ Thin Film Paper Transistors," J. Display Technol. 9, 760-763 (2013)

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