Abstract
In this work, we report on the fabrication of hybrid n-channel thin
film transistors using paper as substrate and gate insulator, and indium oxide
$({{In}}_{2}{{O}}_{3})$
thin films as channel layer, and contacts for the source, drain
and gate respectively. Capacitor paper having 10
$\mu{{m}}$
thickness was used.
${{In}}_{2} {{O}}_{3}$
thin films were grown by pulsed electron beam deposition method
at room temperature. The gate leakage current was 20 nA at 5 V and the on/off
current ratio up to
${{6}}\times
{{10}}^{4}$
, limited mainly by the gate leakage. The
transfer characteristics
$-{I}_{d}
({V}_{\rm gs})$
– showed a memory effect with a threshold
voltage of 0.8 V in “0” state and
$-{{3.6}}~{{V}}$
in “1”
state. The drain current-voltage characteristics family
$-{I}_{d} ({V}_{\rm ds})$
– showed
saturation currents up to 3.5 mA in “1”state and about
${{500}}~\mu{{A}}$
in “0” state. The subthreshold swing was 0.3-0.5 V/decade.
© 2013 IEEE
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