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Journal of Display Technology

Journal of Display Technology

| A JOINT IEEE/OSA PUBLICATION

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About the Journal

The Journal of Display Technology (JDT) covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliability aspects of displays and the application of displays. JDT is a joint publishing effort of the IEEE and OSA.

Editor-in-Chief: Arokia Nathan, Cambridge University
ISSN: 1551-319X | eISSN: 1558-9323
Frequency: 12 monthly online issues, 4 quarterly print issues.
2013 Impact Factor: 1.686

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A Low-Cost Low-Noise Amplifier in Poly-Si TFT Technology
Low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) are emerging as... Journal of Display Technology, Vol. 10 Issue 12, pp.1110-1114 (2014)

Low-Power Displays With Dye-Doped Bistable Chiral-Tilted Homeotropic Nematic Liquid Crystals
Energy-efficient display has been drawing much attention in recent years due to the prevailing of mobile... Journal of Display Technology, Vol. 10 Issue 12, pp.1106-1109 (2014)

Carrier Transport Improvement in Blue InGaN Light-Emitting Diodes Via Reduced Polarization Using a Band-Engineered Electron Blocking Layer
This study numerically investigates the effect of using a new electron blocking layer (EBL) for blue InGaN... Journal of Display Technology, Vol. 10 Issue 12, pp.1101-1105 (2014)

A Power-Efficient Driving Method for In-Plane Switching-Mode TFT-LCD Using a Negative Liquid Crystal
This paper presents an effective driving method to reduce the power consumption of an in-plane switching... Journal of Display Technology, Vol. 10 Issue 12, pp.1093-1100 (2014)

Sub-Millisecond Switching of Hybrid-Aligned Nematic Liquid Crystals
In this paper, we propose a method for sub- millisecond switching of hybrid-aligned nematic liquid crystals... Journal of Display Technology, Vol. 10 Issue 12, pp.1088-1092 (2014)

Fabrication of Carbon Nanotube Field-Emission Cathodes by Laser-Induced Transfer of Carbon Nanotubes and Silver Paste
A new laser material-transfer scheme for transfer printing both the silver-paste and the carbon-nanotube... Journal of Display Technology, Vol. 10 Issue 12, pp.1083-1087 (2014)

GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer
The authors report the study of “thermal droop” for GaN-based light-emitting diodes (LEDs) using a single... Journal of Display Technology, Vol. 10 Issue 12, pp.1078-1082 (2014)

Analysis on the Light-Extraction Efficiency of GaN-Based Light-Emitting Diodes With Deep-Hole Amorphous Photonic Crystals Structures
We demonstrated that amorphous photonic crystals can effectively improve the light extraction efficiency of... Journal of Display Technology, Vol. 10 Issue 12, pp.1070-1077 (2014)

Enhancement of GaN-Based Light-Emitting Diodes Transferred From Si (111) Substrate Onto Electroplating Cu Submount With TiO $_{2}$ /SiO $_{2}$ –Al Omnidirectional Reflector
In this paper, crack-free InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were... Journal of Display Technology, Vol. 10 Issue 12, pp.1064-1069 (2014)

A Flexible TFT Circuit Yield Optimizer Considering Process Variation, Aging, and Bending Effects
This paper presents a yield optimization tool, FlexiOptimizer , for flexible thin-film transistor (TFT)... Journal of Display Technology, Vol. 10 Issue 12, pp.1055-1063 (2014)

A Low-Power Time-Synchronization Processor With Symmetric Even/Odd Timer for Charge-Shared LCD Driving of 3DTV Active Shutter Glasses
The proposed sync-processor enables a fractional-order time-synchronization to generate an efficient lens... Journal of Display Technology, Vol. 10 Issue 12, pp.1047-1054 (2014)

Self-Adaptive Structure of Remote Phosphor for Phosphor-Converted White LEDs
High-efficiency white light-emitting diodes (LEDS) with superior spatial color homogeneity (SCH) have been... Journal of Display Technology, Vol. 10 Issue 12, pp.1042-1046 (2014)

LED Collimation Module for Time Sequential Back Light System
Collimation lenses for light-emitting diode (LED) light sources have been widely used in lighting... Journal of Display Technology, Vol. 10 Issue 12, pp.1036-1041 (2014)

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Current Issue

Vol. 10, Iss. 11 — Nov. 1, 2014  

Improving the Vertical Light-Extraction Efficiency of GaN-Based Thin-Film Flip-Chip LEDs With p-Side Deep-Hole Photonic Crystals
This study systematically investigates the light-extraction efficiency (LEE) of GaN-based thin-film... Journal of Display Technology, Vol. 10 Issue 11, pp.909-916 (2014)

Amorphous Oxide Semiconductor TFTs for Displays and Imaging
This paper reviews the mechanisms underlying visible light detection based on phototransistors fabricated... Journal of Display Technology, Vol. 10 Issue 11, pp.917-927 (2014)

Source-Gated Transistors for Power- and Area-Efficient AMOLED Pixel Circuits
In this work, the source-gated transistor (SGT) structure is proposed for implementation of the driving... Journal of Display Technology, Vol. 10 Issue 11, pp.928-933 (2014)

High-Performance Solution-Processed InGaZnO Thin-Film Transistor Fabricated by Ozone-Assisted Atmospheric Pressure Mist Deposition
High-performance amorphous indium-gallium–zinc oxide thin-film transistors (IGZO TFTs) were demonstrated at... Journal of Display Technology, Vol. 10 Issue 11, pp.934-938 (2014)

Effect of Strontium Addition on Stability of Zinc-Tin-Oxide Thin-Film Transistors Fabricated by Solution Process
We fabricated bottom-gate, bottom-contact oxide thin-film transistors (TFTs) using solution-processed ... Journal of Display Technology, Vol. 10 Issue 11, pp.939-944 (2014)

Single-Grain Si TFTs Fabricated From Sputtered Si on a Polyimide Substrate
Single-grain (SG) Si TFTs were fabricated from sputtered a-Si to achieve high performance TFTs on a... Journal of Display Technology, Vol. 10 Issue 11, pp.945-949 (2014)

Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips
Grain growth from molten silicon during micro-thermal-plasma-jet ( ... Journal of Display Technology, Vol. 10 Issue 11, pp.950-955 (2014)

Contact Effects in Amorphous InGaZnO Thin Film Transistors
Control of the source-drain contact properties in amorphous InGaZnO semiconductor active layer is relevant... Journal of Display Technology, Vol. 10 Issue 11, pp.956-961 (2014)

Fluorinated Graphene FETs Controlled by Ionic Liquid Gate
Fluorinated graphene field effect transistors (FETs) with an ionic liquid (IL) top-gate are demonstrated.... Journal of Display Technology, Vol. 10 Issue 11, pp.962-965 (2014)

Fabrication of High-Performance Poly-Si Thin-Film Transistors With Sub-Lithographic Channel Dimensions
A method for fabrication of tri-gate polycrystalline silicon (poly-Si) transistors with short channel length... Journal of Display Technology, Vol. 10 Issue 11, pp.966-970 (2014)

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