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Journal of Lightwave Technology

Journal of Lightwave Technology

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  • Vol. 23, Iss. 12 — Dec. 1, 2005
  • pp: 4222–

Guiding, Modulating, and Emitting Light on Silicon-Challenges and Opportunities

Michal Lipson

Journal of Lightwave Technology, Vol. 23, Issue 12, pp. 4222- (2005)


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Abstract

Silicon photonics could enable a chip-scale platform for monolithic integration of optics and microelectronics for applications of optical interconnects in which high data streams are required in a small footprint. This paper discusses mechanisms in silicon photonics for waveguiding, modulating, light amplification, and emission. These mechanisms, together with recent advances of fabrication techniques, have enabled the demonstration of ultracompact passive and active silicon photonic components with very low loss.

© 2005 IEEE

Citation
Michal Lipson, "Guiding, Modulating, and Emitting Light on Silicon-Challenges and Opportunities," J. Lightwave Technol. 23, 4222- (2005)
http://www.opticsinfobase.org/jlt/abstract.cfm?URI=jlt-23-12-4222


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References

  1. D. A. B. Miller, "Optical interconnects to silicon", IEEE J. Sel. Topics Quantum Electron., vol. 6, no. 6, pp. 1312-1317, Nov./Dec. 2000.
  2. J. D. Meindl, et al. "Interconnect opportunities for gigascale integration", IBM J. Res. Develop., vol. 46, no. 2/3, pp. 245-263, Mar./May 2002.
  3. E. M. Mohammed, et al. "Optical I/O technology for digital VLSI", in Proc. SPIE, vol. 5358, San Jose, CA, 2004, pp. 60-70.
  4. O. Kibar, D. A. Van Blerkom, C. Fan and S. C. Esener, "Power minimization and technology comparisons for digital free-space optoelectronic interconnections", J. Lightw. Technol., vol. 17, no. 4, pp. 546-555, Apr. 1999.
  5. A. M. Pappu and A. B. Apsel, "Analysis of intrachip electrical and optical fanout", Appl. Opt., vol. 44, no. 30, p. 6361, Oct. 2005.
  6. M. Salib, L. Liao, R. Jones, M. Morse, A. Liu, D. Samara-Rubio, D. Alduino and M. Paniccia, "Silicon photonics", Intel Technol. J., vol. 8, no. 2, p. 1442, 2004.
  7. R. C. Johnson, "Intel reveals long-term goals for silicon photonics, sensors", Electron. Eng. Times,, 2002.
  8. L. C. Kimerling, "Photons to the rescue: Microelectronics becomes microphotonics", Electrochem. Soc. Interface, vol. 9, no. 2, p. 28, 2000.
  9. C. Gunn, "CMOs photonics-SOI learns a new trick", in Proc. IEEE Silicon On Insulator (SOI) Conf., Honolulu, HI, 2005.
  10. R. Soref and J. Lorenzo, "All-silicon active and passive guided-wave components for lambda = 1.3 and 1.6 µm", IEEE J. Quantum Electron., vol. QE-22, no. 6, pp. 873-879, Jun. 1986.
  11. Y. A. Vlasov and S. J. McNab, "Losses in single-mode silicon-on-insulator strip waveguides and bends", Opt. Express, vol. 12, no. 8, pp. 1622-1631, Apr. 19, 2004.
  12. K. K. Lee, "Transmission and routing of optical signals in on-chip waveguides for silicon microphotonics", Ph.D. dissertation, Dept. Materials Science Eng., Mass. Inst. Technol., Cambridge, MA, 2001.
  13. V. R. Almeida, R. R. Panepucci and M. Lipson, "Nano-taper for compact mode conversion", Opt. Lett., vol. 28, no. 15, pp. 1302-1304, Aug. 2003.
  14. T. Shoji, T. Tsuchizawa, T. Watanabe, K. Yamada and H. Morita, "Low loss mode size converter from 0.3 µm square Si wire waveguides to singlemode fibers", Electron. Lett., vol. 38, no. 25, pp. 1669-1670, Dec. 2002.
  15. P. D. Trinh, S. Yegnanarayanan and B. Jalali, "Guided-wave optical circuits in silicon-on-insulator technology", in Tech. Dig. Integrated Photonics Research Conf., vol. 6, Boston, MA, 1996, pp. 273-277.
  16. T. E. Murphy, J. T. Hastings and H. I. Smith, "Fabrication and characterization of narrow-band Bragg-reflection filters in silicon-on-insulator ridge waveguides", J. Lightw. Technol., vol. 19, no. 12, pp. 1938-1942, Dec. 2001.
  17. D. R. Lim, B. E. Little, K. K. Lee, M. Morse, H. H. Fujimoto, H. A. Haus and L. C. Kimerling, "Micron-sized channel dropping filters using silicon waveguide devices", in Proc. SPIE-Int. Soc. Optical Engineering, vol. 3847, Boston, MA, 1999, pp. 65-71.
  18. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu and M. Paniccia, "A high-speed silicon optical modulation based on a metal-oxide-semiconductor capacitor", Nature, vol. 427, no. 6975, pp. 615-618, Feb. 2004.
  19. L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, Intel Corporation U. D. Keil and T. Franck, "High speed silicon Mach-Zehnder", Opt. Express, Intel Corporation, vol. 13, no. 8, pp. 3129-3135, Apr. 2005.
  20. Q. Xu, B. Shcmidt, S. Pradhan and M. Lipson, "Micrometer-scale silicon electro-optic modulator", Nature, no. 435, pp. 325-327, May 2005.
  21. S. Ossicini, L. Pavesi and F. Priolo, Light Emitting Silicon for Microphotonics (Springer Tracts in Modern Physics), Berlin: Germany: Springer-Verlag, 2003.
  22. L. Pavesi, L. DalNegro, C. Mazzoleni, G. Franzò and F. Priolo, "Optical gain in silicon nanocrystals", Nature, vol. 408, no. 6811, pp. 440-444, Nov. 2000.
  23. R. Clap, D. Dimitropoulos, V. Raghunathan, Y. Han and B. Jalali, "Observation of stimulated Raman amplification in silicon waveguides", Opt. Express, vol. 11, no. 5, pp. 1731-1739, Jul. 2003.
  24. T. K. Liang and H. K. Tsang, "Role of free carriers from two-photon absorption in Raman amplification in silicon-on-insulator waveguides", Appl. Phys. Lett., vol. 84, no. 15, pp. 2745-2747, Apr. 2004.
  25. R. L. Espinola, J. I. Dadap, R. M. Osgood Jr., S. J. McNab and Y. A. Vlasov, "Raman amplification in ultrasmall silicon-on-insulator wire waveguides", Opt. Express, vol. 12, no. 16, pp. 3713-3718, Aug. 2004.
  26. Q. Xu, V. R. Almeida and M. Lipson, "Time-resolved study of Raman gain in highly confined silicon-on-insulator waveguides", Opt. Express, vol. 12, no. 19, pp. 4437-4442, Sep. 2004.
  27. H. Rong, A. Liu, R. Jones, O. Cohen, D. Hak, R. Nicolaescu, A. Fang and M. Paniccia, "An all-silicon Raman laser", Nature, vol. 7023, no. 433, pp. 292-294, Jan. 2005.
  28. G. Masini, L. Colace, G. Assanto, H. C. Luan and L. C. Kimerling, "Germanium on silicon pin photodiodes for the near infrared", Electron. Lett., vol. 36, no. 25, pp. 2095-2096, Dec. 2000.
  29. M. Jutzo and M. Berroth, "SiGe-based photodetectors for optical communication," in Applications Properties of Silicon Germanium and SiGe:Carbon, E. Kasper, and K. Lyutovich, Eds. London: U.K.: INSPEC, 2000, pp. 342-348.
  30. J. Oh, S. K. Banerjee and J. C. Campbell, "Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers", IEEE Photon. Technol. Lett., vol. 16, no. 2, pp. 581-583, Feb. 2004.
  31. K. K. Lee, D. R. Lim, H.-C. Luan, A. Agarwal, J. Foresi and L. C. Kimerling, "Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model", Appl. Phys. Lett., vol. 77, no. 11, pp. 1617-1619, Sep. 2000.
  32. J. Schmidtchen, A. Splett, B. Schüppert and K. Petermann, "Low loss single mode optical waveguides with large cross-section in silicon-on-insulator", Electron. Lett., vol. 27, no. 16, pp. 1486-1488, Aug. 1991.
  33. R. A. Soref, J. Schmidtchen and K. Peterman, "Large single-mode rib waveguides in GeSi-Si and Si-on-SiO", IEEE J. Quantum Electron., vol. 27, no. 8, pp. 1971-1973, Aug. 1991.
  34. J. D. Joannopoulos, R. D. Meade and J. N. Winn, Photonic Crystals: Molding the Flow of Light, Princeton, NJ: Princeton Univ. Press, 1995.
  35. S. Y. Lin, J. G. Fleming, D. L. Hetherington, B. K. Smith, R. Biswas, K. M. Ho, M. M. Sigalas, W. Zubrzycki, S. R. Kurtz and J. Bur, "A three-dimensional photonic crystal operating at infrared wavelengths", Nature, vol. 394, pp. 251-253, Jul. 16, 1998.
  36. M. Loncar, T. Doll, J. Vuckovic and A. Scherer, "Design and fabrication of silicon photonic crystal optical waveguides", J. Lightw. Technol., vol. 18, no. 10, pp. 1402-1411, Oct. 2000.
  37. V. R. Almeida, Q. Xu, C. A. Barrios and M. Lipson, "Guiding and confining light in void nanostructure", Opt. Lett., vol. 29, no. 11, pp. 1209-1211, Jun. 2004.
  38. Q. Xu, V. R. Almeida and M. Lipson, "Experimental demonstration of guiding and confining light in nanometer-size low-refractive-index material", Opt. Lett., vol. 29, no. 14, pp. 1626-1628, Jul. 2004.
  39. C. Pollock and M. Lipson, Integrated Photonics, Boston, MA: Kluwer, 2003.
  40. M. Heiblum and J. Harris, "Analysis of curved optical waveguides by conformal transformation", IEEE J. Quantum Electron., vol. QE-11, no. 2, pp. 75-83, Feb. 1975.
  41. C. Manolatou, S. G. Johnson, S. Fan, P. R. Villeneuve, H. A. Haus and J. D. Joannopoulos, "High-density integrated optics", J. Lightw. Technol., vol. 17, no. 9, pp. 1682-1692, Sep. 1999.
  42. D. Nedeljkovic, M. Loncar, S. Kuchinsky, M. Mikhailov, A. Scherer and T. P. Pearsall, "Waveguiding at 1550 nm using photonic crystal structures in silicon on insulator wafers", in Optical Fiber Communication Conf. and Exhibit. Tech. Dig. Postconf. Edition, vol. 2, Anaheim, CA, 2001, pp. TuC6-1-TuC6-3.
  43. U. Fischer, T. Zinke, J.-R. Kropp, F. Arndt and K. Peterman, "0.1 dB/cm waveguide losses in single-mode SOI rib waveguides", IEEE Photon. Technol. Lett., vol. 8, no. 5, pp. 647-648, May 1996.
  44. P. K. Tien, "Light waves in thin films and integrated optics", Appl. Opt., vol. 10, no. 11, pp. 2395-2413, Nov. 1971.
  45. K. K. Lee, D. R. Lim and L. C. Kimerling, "Fabrication of ultralow-loss Si/SiO waveguides by roughness reduction", Opt. Lett., vol. 26, no. 23, pp. 1888-1890, Dec. 2001.
  46. J. S. Foresi, P. R. Villeneuve, J. Ferrera, E. R. Thoen, G. Steinmeyer, S. Fan, J. D. Joannopoulos, L. C. Kimerling, H. I. Smith and E. P. Ippen, "Photonic-bandgap microcavities in optical waveguides", Nature, vol. 390, no. 6656, pp. 143-145, Nov. 1997.
  47. T. Yoshie, et al. "High quality two-dimensional photonic crystal slab cavities", Appl. Phys. Lett., vol. 79, no. 26, pp. 4289-4291, Dec. 2001.
  48. V. R. Almeida, C. A. Barrios, R. R. Panepucci and M. Lipson, "All-optical control of light on a silicon chip", Nature, vol. 431, no. 7012, pp. 1081-1084, Oct. 2004.
  49. S. M. Weiss, M. Molinari and P. M. Fauchet, "Temperature stability for silicon-based photonic band-gap structures", Appl. Phys. Lett., vol. 83, no. 10, pp. 1980-1982, Sep. 2003.
  50. P. Cheben, D.-X. Xu, S. Janz and A. Delâge, "Scaling down photonic waveguide devices on the SOI platform", in Proc. SPIE-Int. Soc. Opt. Engineering, vol. 5117, San Diego, CA, 2003, pp. 147-156.
  51. C. Cocorullo, M. Iodice, I. Rendina and P. M. Sarro, "Silicon thermo-optical micro-modulator with 700 kHz-3 dB bandwidth", IEEE Photon. Technol. Lett., vol. 7, no. 4, pp. 363-365, Apr. 1995.
  52. R. A. Soref and B. R. Bennett, "Electrooptical effects in silicon", IEEE J. Quantum Electron., vol. QE-23, no. 1, pp. 123-129, Jan. 1987.
  53. R. A. Soref and B. R. Bennett, "Kramers-Kronig analysis of E-O switching in silicon", SPIE Integr. Opt. Circuit Eng., vol. 704, pp. 32-37, Sep. 1986.
  54. C. Z. Zhao, E. K. Liu, G. Z. Li, Y. Gao and C. S. Guo, "Zero-gap directional coupler switch integrated into a silicon-on-insulator for 1.3-µm -operation", Opt. Lett., vol. 21, no. 20, p. 1664, Oct. 1996.
  55. C. Angulo Barrios, V. R. Almeida and M. Lipson, "Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices", J. Lightw. Technol., vol. 21, no. 10, pp. 2332-2339, Oct. 2003.
  56. S. R. Giguere, L. Friedman, R. A. Soref and J. P. Lorenzo, "Simulation studies of silicon electro-optic waveguide devices", J. Appl. Phys., vol. 68, no. 10, pp. 4964-4970, Nov. 1990.
  57. G. Cocorullo, M. Iodice and I. Rendina, "All-silicon Fabry-Pérot modulator based on the thermo-optic effect", Opt. Lett., vol. 19, no. 6, p. 420, Mar. 1994.
  58. X. Xiao, J. C. Sturm, K. K. Goel and P. V. Schwartz, "Fabry-Pérot optical intensity modulator at 1.3 µm -in silicon", IEEE Photon. Technol. Lett., vol. 3, no. 3, pp. 230-231, Mar. 1991.
  59. Y. L. Liu, E. K. Liu, S. L. Zhang, G. Z. Li and J. S. Luo, "Silicon 1 × 2 digital optical switch using plasma dispersion", Electron. Lett., vol. 30, no. 2, pp. 130-131, Jan. 1994.
  60. Y. Liu, E. Liu, G. Li, S. Zhang, J. Luo, F. Zhou, M. Cheng, B. Li and H. Ge, "Novel silicon waveguide switch based on total internal reflection", Appl. Phys. Lett., vol. 64, no. 16, pp. 2079-2080, Apr. 1994.
  61. C. Z. Zhao, G. Z. Li, E. K. Liu, Y. Gao and X. D. Liu, "Silicon on insulator Mach-Zehnder waveguide interferometers operating at 1.3 µm", Appl. Phys. Lett., vol. 67, no. 17, pp. 2448-2449, Oct. 1995.
  62. M. Y. Liu and S. Chou, "High-modulation-depth and short-cavity-length silicon Fabry-Pérot modulator with two grating Bragg reflectors", Appl. Phys. Lett., vol. 68, no. 2, pp. 170-172, Jan. 1995.
  63. A. Cutolo, M. Iodice, A. Irace, P. Spirito and L. Zeni, "An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide", Appl. Phys. Lett., vol. 71, no. 2, pp. 199-201, Jul. 1997.
  64. A. Cutolo, M. Iodice, P. Spirito and L. Zeni, "Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI waveguide", J. Lightw. Technol., vol. 15, no. 3, pp. 505-518, Mar. 1997.
  65. C. Z. Zhao, A. H. Chen, E. K. Liu and G. Z. Li, "Silicon-on-insulator asymmetric optical switch based on total internal reflection", IEEE Photon. Technol. Lett., vol. 9, no. 8, pp. 1113-1115, Aug. 1997.
  66. G. Coppola, A. Irace, M. Iodice and A. Cutolo, "Simulation and analysis of a high-efficiency silicon optoelectronic modulator based on a Bragg mirror", Opt. Eng., vol. 40, no. 6, pp. 1076-1081, 2001.
  67. A. Sciuto, S. Libertino, A. Alessandria, S. Coffa and G. Coppola, "Design, fabrication and testing of an integrated Si-based light modulator", J. Lightw. Technol., vol. 21, no. 1, pp. 228-235, Jan. 2003.
  68. C. K. Tang and G. T. Reed, "Highly efficient optical phase modulator in SOI waveguides", Electron. Lett., vol. 31, no. 6, pp. 451-452, Mar. 1995.
  69. C. Barrios and M. Lipson, "Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration", J. Appl. Phys., vol. 96, no. 11, pp. 6008-6015, Dec. 2004.
  70. V. R. Almeida, C. A. Barrios, R. R. Panepucci, M. Lipson, M. A. Foster, D. G. Quzounov and A. L. Gaeta, "All-optical switching on a silicon chip", Opt. Lett., vol. 29, no. 24, pp. 2867-2869, Dec. 2004.
  71. A. Chin, K. Y. Lee, B. C. Lin and S. Horng, "Picosecond photoresponse of carriers in Si ion-implanted Si", Appl. Phys. Lett., vol. 69, no. 5, pp. 653-655, Jul. 1996.
  72. L. Kimerling, Towards the First Silicon Laser, L. Pavesi, S. Gaponenko, and L. Dal Negro, Eds. New York: Kluwer, 2003,vol. 93, p. 465.
  73. I. Moerman, P. P. Van Daele and P. M. Daneester, "A review on fabrication technologies for the monolithic integration of tapers with III-V semiconductor devices", IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 6, pp. 1308-1320, Dec. 1997.
  74. C. Manolatou and H. Haus, "Compact mode-size converters for efficient coupling between fibers and integrated optical waveguides", in Proc. Lasers and Electro-Optics Society (LEOS) Summer Topical Meetings, vol. 31, 2001.
  75. R. B. Hammond and R. N. Silver, "Temperature dependence of the exciton lifetime in high-purity silicon", Appl. Phys. Lett., vol. 36, no. 1, pp. 68-71, Jan. 1980.
  76. M. A. Tamor and J. P Wolfe, "Drift and diffusion of free excitons in Si", Phys. Rev. Lett., vol. 44, no. 25, pp. 1703-1706, Jun. 1980.
  77. O. Bisi, S. U. Campisano, L. Pavesi, and F. Priolo, Eds. Silicon Based Microphotonics: From Basics to Applications, Amsterdam: The Netherlands: IOS, 1999.
  78. M. H. Nayfeh, N. Barry, J. Therrien, O. Akcakir, E. Gratton and G. Belomoin, "Stimulated blue emission in reconstituted films of ultrasmall silicon nanoparticles", Appl. Phys. Lett., vol. 78, no. 8, pp. 1131-1133, Feb. 2001.
  79. F. G. Grom, P. M. Fauchet, L. Tsybeskov, J. P. McCaffrey, H. J. Labbe, D. J. Lockwood and B. E. White, "Microcrystalline and nanocrystalline semiconductors-2000", in Proc. Materials Research Society Symp., vol. 638, Boston, MA, 2001, pp. F6.1.1-F6.1.6.
  80. F. Iacona, G. Franzò and C. Spinella, "Correlation between luminescence and structural properties of Si nanocrystals", J. Appl. Phys., vol. 87, no. 3, pp. 1295-1303, Feb. 2000.
  81. P. M. Fauchet, J. Ruan, H. Chen, L. Pavesi, L. Dal Negro, M. Cazzaneli, R. G. Elliman, N. Smith, M. Samoc and B. Luther-Davies, "Optical gain in different silicon nanocrystal systems", Opt. Mater., vol. 27, no. 5, pp. 745-749, Feb. 2005.
  82. R. J. Walters, G. I. Bourianoff and H. A. Atwater, "Field-effect electroluminescene in silicon nanocrystal", Nat. Mater., vol. 4, no. 2, pp. 143-146, Feb. 2005.
  83. R. Boyd, Nonlinear Optics, 2nd ed. San Diego, CA: Academic, 2003.
  84. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang and M. Paniccia, "A continuous-wave Raman silicon laser", Nature, vol. 433, no. 7027, pp. 725-728, Feb. 2005.
  85. P. C. Becker, N. A. Olsson and J. R. Simpson, Erbium-Doped Fibre Amplifiers, London: U.K.: Academic, 1999.
  86. A. M. Agarwal, L. Liao, J. S. Foresi, M. R. Black, X. Duan and L. C. Kimerling, "Low-loss polycrystalline silicon waveguides for silicon photonics", J. Appl. Phys., vol. 80, no. 11, pp. 6120-6123, Dec. 1996.
  87. A. Polman, G. N. van den Hoven, J. S. Custer, J. H. Shin, R. Serna and P. F. A. Alkemade, "Erbium in crystal silicon: Optical activation, excitation and concentration limits", J. Appl. Phys., vol. 77, no. 3, pp. 1256-1262, Feb. 1995.
  88. G. Franzò, S. Coffa, F. Priolo and C. Spinella, "Mechanism and performance of forward and reverse bias electroluminescence at 1.54 µm from Er-doped Si diodes", J. Appl. Phys., vol. 81, no. 6, pp. 2784-2793, Mar. 1997.
  89. B. Zheng, J. Michel, F. Y. G. Ren, L. C. Kimerling, D. C. Jacobson and J. M. Poate, "Room-temperature sharp line electroluminescence at lambda = 1.54 µm from an erbium-doped, silicon light-emitting diode", Appl. Phys. Lett., vol. 64, no. 21, pp. 2842-2844, May 1994.
  90. S. Coffa, G. Franzò and F. Priolo, "High efficiency and fast modulation of Er-doped light emitting Si diodes", Appl. Phys. Lett., vol. 69, no. 14, pp. 2077-2079, Sep. 1996.
  91. J. Palm, F. Gan, B. Zheng, J. Michel and L. C. Kimerling, "Electroluminescence of erbium-doped silicon", Phys. Rev. B, Condens. Matter, vol. 54, no. 24, pp. 17603-17615, Dec. 1996.
  92. R. Serna, J. H. Shin, M. Lohmeier, E. Vlieg, A. Polman and P. F. A. Alkemade, "Incorporation and optical activation of erbium in silicon using molecular beam epitaxy", J. Appl. Phys., vol. 79, no. 5, pp. 2658-2662, Mar. 1996.
  93. A. Reittinger, J. Stimmer and G. Abstreiter, "Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes", Appl. Phys. Lett., vol. 70, no. 18, pp. 2431-2433, May 1997.
  94. P. N. Favennec, H. l'Haridon, D. Moutonnet, M. Salvi and M. Gauneau, "Optical activation of Er3+ implanted in silicon by oxygen impurities", Jpn. J. Appl. Phys., vol. 29, no. 4, pp. L524-L526, Apr. 1990.
  95. J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. G. Eaglesham, E. A. Fitzgerald, Y.-H. Xie, J. M. Poate and L. C. Kimerling, "Impurity enhancement of the 1.54-µm Er3+ luminescence in silicon", J. Appl. Phys., vol. 70, no. 5, pp. 2672-2678, Sep. 1991.
  96. F. Priolo, G. Franzò, S. Coffa and A. Carnera, "Excitation and nonradiative deexcitation processes of Er3+ in crystalline Si", Phys. Rev. B, Condens. Matter, vol. 57, no. 8, pp. 4443-4455, Feb. 1998.
  97. S. Coffa, G. Franzò, F. Priolo, A. Polman and R. Serna, "Temperature dependence and quenching processes of the intra-4f luminescence of Er in crystalline Si", Phys. Rev. B, Condens. Matter, vol. 49, no. 23, pp. 16313-16320, Jun. 1994.
  98. T. Gregorkiewicz, D. T. X. Thao, J. M. Langer, H. H. P. T. Bekman, M. S. Bresler, J. Michel and L. C. Kimerling, "Energy transfer between shallow centers and rare-earth ion cores: Er3+ ion in silicon", Phys. Rev. B, Condens. Matter, vol. 61, no. 8, pp. 5369-5375, Feb. 2000.
  99. P. G. Kik, "Energy transfer in erbium doped optical waveguides based on silicon", Ph.D. dissertation, Nanophysics Dept., FOM-Inst. Atomic and Molecular Phys., Amsterdam, The Netherlands, 2000.
  100. M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi and K. Yamamoto, "1.54 µm photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+", Appl. Phys. Lett., vol. 71, no. 9, pp. 1198-1200, Sep. 1997.
  101. F. Iacona, D. Pacifici, A. Irrera, M. Miritello, G. Franzò, F. Priolo, D. Sanfilippo, G. Di Stefano and P. G. Fallica, "Electroluminescence at 1.54 µm in Er-doped Si nanocluster-based devices", Appl. Phys. Lett., vol. 81, no. 17, pp. 3242-3244, Oct. 2002.
  102. X. Zhao, S. Komuro, H. Isshiki, Y. Aoyagi and T. Sugano, "Fabrication and stimulated emission of Er-doped nanocrystalline Si waveguides formed on Si substrates by laser ablation", Appl. Phys. Lett., vol. 74, no. 1, pp. 120-122, Jan. 1999.
  103. H.-S. Han, S.-Y. Seo and J. H. Shin, "Optical gain at 1.54 µm in erbium-doped silicon nanocluster sensitized waveguide", Appl. Phys. Lett., vol. 79, no. 27, pp. 4568-4570, Dec. 2001.

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